We have fabricated hybrid ferromagnet-semiconductor devices which have magnetic barriers in a form of the serial junctions of positive and negative magnetic-field regions. These magnetic barriers are controlled by a magnetization of micromagnets on the surface of the device. The large variation of longitudinal resistance as a function of the magnitude of magnetic barriers has been observed, and its functional form is similar to Hall resistance. At low temperature the measured longitudinal resistance of our device shows negative value. This device can be a good candidate for spintronic devices using spin up/down junction.
Bibliographical noteFunding Information:
This work was supported by the Vison21 Program at Korea Institute of Science and Technology, the Brain Korea 21 Project in 2006, and the Electron Spin Science Center at Pohang University of Science and Technology.
Copyright 2008 Elsevier B.V., All rights reserved.
- Hall effect
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics