Longitudinal resistance on a serial magnetic barrier device

S. Joo; J. Hong; K. Rhie; K. Y. Jung; K. H. Kim; S. U. Kim; H. Yie; K. Shin; B. C. Lee

doi:10.1016/j.jmmm.2006.10.824

Longitudinal resistance on a serial magnetic barrier device

S. Joo, J. Hong, K. Rhie, K. Y. Jung, K. H. Kim, S. U. Kim, H. Yie, K. Shin, B. C. Lee

School of Health and Environmental Science

Research output: Contribution to journal › Article › peer-review

Abstract

We have fabricated hybrid ferromagnet-semiconductor devices which have magnetic barriers in a form of the serial junctions of positive and negative magnetic-field regions. These magnetic barriers are controlled by a magnetization of micromagnets on the surface of the device. The large variation of longitudinal resistance as a function of the magnitude of magnetic barriers has been observed, and its functional form is similar to Hall resistance. At low temperature the measured longitudinal resistance of our device shows negative value. This device can be a good candidate for spintronic devices using spin up/down junction.

Original language	English
Pages (from-to)	e652-e654
Journal	Journal of Magnetism and Magnetic Materials
Volume	310
Issue number	2 SUPPL. PART 3
DOIs	https://doi.org/10.1016/j.jmmm.2006.10.824
Publication status	Published - 2007 Mar

Bibliographical note

Funding Information:
This work was supported by the Vison21 Program at Korea Institute of Science and Technology, the Brain Korea 21 Project in 2006, and the Electron Spin Science Center at Pohang University of Science and Technology.

Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.

Keywords

Hall effect
InAs
Magnetoresistance
Micromagnet

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1016/j.jmmm.2006.10.824

Cite this

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title = "Longitudinal resistance on a serial magnetic barrier device",

abstract = "We have fabricated hybrid ferromagnet-semiconductor devices which have magnetic barriers in a form of the serial junctions of positive and negative magnetic-field regions. These magnetic barriers are controlled by a magnetization of micromagnets on the surface of the device. The large variation of longitudinal resistance as a function of the magnitude of magnetic barriers has been observed, and its functional form is similar to Hall resistance. At low temperature the measured longitudinal resistance of our device shows negative value. This device can be a good candidate for spintronic devices using spin up/down junction.",

keywords = "Hall effect, InAs, Magnetoresistance, Micromagnet",

author = "S. Joo and J. Hong and K. Rhie and Jung, {K. Y.} and Kim, {K. H.} and Kim, {S. U.} and H. Yie and K. Shin and Lee, {B. C.}",

note = "Funding Information: This work was supported by the Vison21 Program at Korea Institute of Science and Technology, the Brain Korea 21 Project in 2006, and the Electron Spin Science Center at Pohang University of Science and Technology. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

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doi = "10.1016/j.jmmm.2006.10.824",

language = "English",

volume = "310",

pages = "e652--e654",

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T1 - Longitudinal resistance on a serial magnetic barrier device

AU - Joo, S.

AU - Hong, J.

AU - Rhie, K.

AU - Jung, K. Y.

AU - Kim, K. H.

AU - Kim, S. U.

AU - Yie, H.

AU - Shin, K.

AU - Lee, B. C.

N1 - Funding Information: This work was supported by the Vison21 Program at Korea Institute of Science and Technology, the Brain Korea 21 Project in 2006, and the Electron Spin Science Center at Pohang University of Science and Technology. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2007/3

Y1 - 2007/3

N2 - We have fabricated hybrid ferromagnet-semiconductor devices which have magnetic barriers in a form of the serial junctions of positive and negative magnetic-field regions. These magnetic barriers are controlled by a magnetization of micromagnets on the surface of the device. The large variation of longitudinal resistance as a function of the magnitude of magnetic barriers has been observed, and its functional form is similar to Hall resistance. At low temperature the measured longitudinal resistance of our device shows negative value. This device can be a good candidate for spintronic devices using spin up/down junction.

AB - We have fabricated hybrid ferromagnet-semiconductor devices which have magnetic barriers in a form of the serial junctions of positive and negative magnetic-field regions. These magnetic barriers are controlled by a magnetization of micromagnets on the surface of the device. The large variation of longitudinal resistance as a function of the magnitude of magnetic barriers has been observed, and its functional form is similar to Hall resistance. At low temperature the measured longitudinal resistance of our device shows negative value. This device can be a good candidate for spintronic devices using spin up/down junction.

KW - Hall effect

KW - InAs

KW - Magnetoresistance

KW - Micromagnet

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VL - 310

SP - e652-e654

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 2 SUPPL. PART 3

ER -

Longitudinal resistance on a serial magnetic barrier device

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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