TY - GEN
T1 - Low cost ternary content addressable memory based on early termination precharge scheme
AU - Lee, Kyeongho
AU - Ko, Geon
AU - Park, Jongsun
N1 - Funding Information:
This work was supported by the National Research Foundation of Korea grant funded by the Korea government (NRF-2016 R1A2B4015329 and NRF-2015M3D1A1070465), and the Information Technology Research and Development Program of Korea Evaluation Institute of Industrial Technology [10052716, Design technology development of ultralow voltage operating circuit and IP for smart sensor SoC]
Publisher Copyright:
© 2019 IEEE
PY - 2019
Y1 - 2019
N2 - In this paper, we present early termination match-line (ML) precharge scheme for low power and high speed ternary content addressable memory (TCAM). In the proposed TCAM, by employing the pre-decision based early termination, unnecessary ML precharging has been effectively eliminated while improving the search speed and achieving error-free operation. The reference voltage generator used to implement the proposed early termination approach can be simply designed using dummy row without large area overhead. According to the post-layout simulations with the 65nm CMOS process, the proposed early termination ML precharge scheme shows up to 30.4% of sensing delay improvement and 65.9% of ML power savings compared to the conventional approach. It also shows 8% of FOM (energy/bit/search) improvement compared to state-of-the-art works.
AB - In this paper, we present early termination match-line (ML) precharge scheme for low power and high speed ternary content addressable memory (TCAM). In the proposed TCAM, by employing the pre-decision based early termination, unnecessary ML precharging has been effectively eliminated while improving the search speed and achieving error-free operation. The reference voltage generator used to implement the proposed early termination approach can be simply designed using dummy row without large area overhead. According to the post-layout simulations with the 65nm CMOS process, the proposed early termination ML precharge scheme shows up to 30.4% of sensing delay improvement and 65.9% of ML power savings compared to the conventional approach. It also shows 8% of FOM (energy/bit/search) improvement compared to state-of-the-art works.
KW - CAM
KW - Content addressable memory
KW - Early termination precharge
KW - Memory
KW - Reference voltage
KW - Sensing margin
KW - TCAM
UR - http://www.scopus.com/inward/record.url?scp=85066793537&partnerID=8YFLogxK
U2 - 10.1109/ISCAS.2019.8702372
DO - 10.1109/ISCAS.2019.8702372
M3 - Conference contribution
AN - SCOPUS:85066793537
T3 - Proceedings - IEEE International Symposium on Circuits and Systems
BT - 2019 IEEE International Symposium on Circuits and Systems, ISCAS 2019 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2019 IEEE International Symposium on Circuits and Systems, ISCAS 2019
Y2 - 26 May 2019 through 29 May 2019
ER -