Abstract
This paper presents an adaptive match-line (ML) discharging scheme for low power and high speed ternary content addressable memory (TCAM). In the proposed TCAM, by employing the gated ML pulldown path and ML boosting scheme, the redundant ML discharging and SL switching are eliminated while improving the search speed. By considering the number of mismatch and ML discharging speed, the ML discharging is adaptively controlled in the proposed TCAM. The simulation results with the 65nm CMOS technology show that the proposed adaptive ML discharging scheme improves up to 19% of sensing delay and saves 81% of ML power compared to the conventional approach. When compared with the state-of-the-art work, the post-layout simulations show 10% improvement of FOM (energy/bit/search).
Original language | English |
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Title of host publication | 2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018 - Proceedings |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Electronic) | 9781538648810 |
DOIs | |
Publication status | Published - 2018 Apr 26 |
Event | 2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018 - Florence, Italy Duration: 2018 May 27 → 2018 May 30 |
Publication series
Name | Proceedings - IEEE International Symposium on Circuits and Systems |
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Volume | 2018-May |
ISSN (Print) | 0271-4310 |
Other
Other | 2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018 |
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Country/Territory | Italy |
City | Florence |
Period | 18/5/27 → 18/5/30 |
Bibliographical note
Funding Information:This work was supported by the National Research Foundation of Korea grant funded by the Korea government (NRF-2016 R1A2B4015329 and NRF-2015M3D1A1070465), and the Information Technology Research and Development Program of Korea Evaluation Institute of Industrial Technology [10052716, Design technology development of ultralow voltage operating circuit and IP for smart sensor SoC]
Publisher Copyright:
© 2018 IEEE.
Keywords
- CAM
- TCAM
- adaptive sensing
- content addressable memory
- memory
- reference voltage
- sensing margin
ASJC Scopus subject areas
- Electrical and Electronic Engineering