Low dielectric constant of MeV ion-implanted poly(vinylidene fluoride)

Sang Yun Lee; Bo Hyun Kim; Soung Kyu Park; Jinsoo Joo; Yowng Whoan Beag; Seok Keun Koh

doi:10.1007/BF03218271

Low dielectric constant of MeV ion-implanted poly(vinylidene fluoride)

Sang Yun Lee, Bo Hyun Kim, Soung Kyu Park, Jinsoo Joo, Yowng Whoan Beag, Seok Keun Koh

Department of Physics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Poly (vinylidene fluoride) (PVDF) samples were implanted by using high energy (MeV) F²⁺ and Cl²⁺ ions. We observed that AC dielectric constant of the ion-implanted PVDF samples decreased from 10.5 to 2.5 at 1 kHz as the ion dosage increased from 10¹¹ to 3 × 10¹⁴ ions/cm². From differential scanning calorimetry experiments, we observed that PVDF samples become more disordered state through the ion implantation. The decrease of the number of bonding of C-H and C-F and the increase of unsaturated bonding were observed from X-ray photoelectron spectroscopy experiments. The emission of HF and H₂ molecules during the ion implantation was detected by residual gas analyzer spectrum. Based upon the results, we analyzed that the low AC dielectric constant of the MeV ion-implanted PVDF samples originated from the reduction of polarization due to the structural change of the CF₂ molecules in the MeV ion-implanted PVDF samples.

Original language	English
Pages (from-to)	9-13
Number of pages	5
Journal	Macromolecular Research
Volume	11
Issue number	1
DOIs	https://doi.org/10.1007/BF03218271
Publication status	Published - 2003 Feb

Keywords

AC dielectric constant
Interlayer dielectric
Ion implantation
Poly(vinylidene fluoride)

ASJC Scopus subject areas

Chemical Engineering(all)
Organic Chemistry
Polymers and Plastics
Materials Chemistry

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@article{ea2941abac704d2995b3e16fe33f87d5,

title = "Low dielectric constant of MeV ion-implanted poly(vinylidene fluoride)",

abstract = "Poly (vinylidene fluoride) (PVDF) samples were implanted by using high energy (MeV) F2+ and Cl2+ ions. We observed that AC dielectric constant of the ion-implanted PVDF samples decreased from 10.5 to 2.5 at 1 kHz as the ion dosage increased from 1011 to 3 × 1014 ions/cm2. From differential scanning calorimetry experiments, we observed that PVDF samples become more disordered state through the ion implantation. The decrease of the number of bonding of C-H and C-F and the increase of unsaturated bonding were observed from X-ray photoelectron spectroscopy experiments. The emission of HF and H2 molecules during the ion implantation was detected by residual gas analyzer spectrum. Based upon the results, we analyzed that the low AC dielectric constant of the MeV ion-implanted PVDF samples originated from the reduction of polarization due to the structural change of the CF2 molecules in the MeV ion-implanted PVDF samples.",

keywords = "AC dielectric constant, Interlayer dielectric, Ion implantation, Poly(vinylidene fluoride)",

author = "Lee, {Sang Yun} and Kim, {Bo Hyun} and Park, {Soung Kyu} and Jinsoo Joo and Beag, {Yowng Whoan} and Koh, {Seok Keun}",

year = "2003",

month = feb,

doi = "10.1007/BF03218271",

language = "English",

volume = "11",

pages = "9--13",

journal = "Macromolecular Research",

issn = "1598-5032",

publisher = "Polymer Society of Korea",

number = "1",

}

TY - JOUR

T1 - Low dielectric constant of MeV ion-implanted poly(vinylidene fluoride)

AU - Lee, Sang Yun

AU - Kim, Bo Hyun

AU - Park, Soung Kyu

AU - Joo, Jinsoo

AU - Beag, Yowng Whoan

AU - Koh, Seok Keun

PY - 2003/2

Y1 - 2003/2

N2 - Poly (vinylidene fluoride) (PVDF) samples were implanted by using high energy (MeV) F2+ and Cl2+ ions. We observed that AC dielectric constant of the ion-implanted PVDF samples decreased from 10.5 to 2.5 at 1 kHz as the ion dosage increased from 1011 to 3 × 1014 ions/cm2. From differential scanning calorimetry experiments, we observed that PVDF samples become more disordered state through the ion implantation. The decrease of the number of bonding of C-H and C-F and the increase of unsaturated bonding were observed from X-ray photoelectron spectroscopy experiments. The emission of HF and H2 molecules during the ion implantation was detected by residual gas analyzer spectrum. Based upon the results, we analyzed that the low AC dielectric constant of the MeV ion-implanted PVDF samples originated from the reduction of polarization due to the structural change of the CF2 molecules in the MeV ion-implanted PVDF samples.

AB - Poly (vinylidene fluoride) (PVDF) samples were implanted by using high energy (MeV) F2+ and Cl2+ ions. We observed that AC dielectric constant of the ion-implanted PVDF samples decreased from 10.5 to 2.5 at 1 kHz as the ion dosage increased from 1011 to 3 × 1014 ions/cm2. From differential scanning calorimetry experiments, we observed that PVDF samples become more disordered state through the ion implantation. The decrease of the number of bonding of C-H and C-F and the increase of unsaturated bonding were observed from X-ray photoelectron spectroscopy experiments. The emission of HF and H2 molecules during the ion implantation was detected by residual gas analyzer spectrum. Based upon the results, we analyzed that the low AC dielectric constant of the MeV ion-implanted PVDF samples originated from the reduction of polarization due to the structural change of the CF2 molecules in the MeV ion-implanted PVDF samples.

KW - AC dielectric constant

KW - Interlayer dielectric

KW - Ion implantation

KW - Poly(vinylidene fluoride)

UR - http://www.scopus.com/inward/record.url?scp=0038134985&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0038134985&partnerID=8YFLogxK

U2 - 10.1007/BF03218271

DO - 10.1007/BF03218271

M3 - Article

AN - SCOPUS:0038134985

SN - 1598-5032

VL - 11

SP - 9

EP - 13

JO - Macromolecular Research

JF - Macromolecular Research

IS - 1

ER -

Low dielectric constant of MeV ion-implanted poly(vinylidene fluoride)

Abstract

Keywords

ASJC Scopus subject areas

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