Keyphrases
Low Energy
100%
Switching Current
100%
Oxide Matrix
100%
Neuromorphic Computing
100%
Ion Motion
100%
Analog Memristor
100%
Crystallinity
66%
Switching Characteristics
66%
Conductive Filament
66%
HfO2
66%
Memristor
66%
Ion Migration
66%
Mobile Species
66%
Highly Symmetric
33%
Device Performance
33%
Grain Boundary
33%
Resistive Switching
33%
Current-voltage
33%
Pattern Recognition
33%
Recognition Test
33%
Highly Linear
33%
Switching Devices
33%
Matrix Materials
33%
High Switching
33%
Matrix Influence
33%
Motion Characteristics
33%
Indian Institute of Technology
33%
National Institute of Standards
33%
Amorphous Oxides
33%
Characteristic Performance
33%
Modulatory Properties
33%
Electrochemical Metallization
33%
Ion Mobility
33%
Conductance Modulation
33%
Amorphous HfO2
33%
Physics
Memristor
100%
Ion Motion
100%
Crystallinity
66%
Grain Boundaries
33%
Resistive Switching
33%
Matrix Material
33%
Pattern Recognition
33%
Metallizing
33%
Engineering
Oxide Matrix
100%
Crystallinity
66%
Resistive
33%
Metallizations
33%
Device Performance
33%
Device Structure
33%
Pattern Recognition
33%
Amorphous Oxide
33%
Grain Boundaries
33%
Matrix Material
33%
Material Science
Ruthenium Ion
100%
Neuromorphic Computing
100%
Oxide Compound
75%
Pattern Recognition
25%
Grain Boundaries
25%