Low field magnetization reversal behavior in GaMnAs films

Yoonjung Gwon; Hyehyeon Byeon; Jaehyuk Won; Hakjoon Lee; Sanghoon Lee; X. Liu; J. K. Furdyna

doi:10.3938/jkps.62.1473

Low field magnetization reversal behavior in GaMnAs films

Yoonjung Gwon, Hyehyeon Byeon, Jaehyuk Won, Hakjoon Lee, Sanghoon Lee, X. Liu, J. K. Furdyna

Research output: Contribution to journal › Article › peer-review

Abstract

The magnetization reversal process of a GaMnAs film has been investigated by using the planar Hall effect. The angle-dependent measurements of the planar Hall resistance that were performed with a field smaller than 60 Oe displayed new intermediate stable resistance values during the rotation of the external field direction over 360°. This phenomenon was understood by considering the formation of the multi-domain, whose magnetizations lie along two magnetic easy axes, and the differences in the domain-pinning fields that required for the transition between two easy axes. We further showed that the relative populations of the magnetic domains corresponding to the two orthogonal easy axes can be controlled by the value of the applied field during the process of magnetization reversal.

Original language	English
Pages (from-to)	1473-1478
Number of pages	6
Journal	Journal of the Korean Physical Society
Volume	62
Issue number	10
DOIs	https://doi.org/10.3938/jkps.62.1473
Publication status	Published - 2013

Bibliographical note

Funding Information:
This research was supported by the Converging Research Center Program through the Ministry of Education, Science and Technology (2012K001244) by the National Research Foundation of Korea (NRF) Grant funded by the Government of Korea (MEST) 2012-045434, and by the National Science Foundation Grant DMR10-05851.

Keywords

Anisotropy
Ferromagnetic semiconductor
Pinning field
Planar Hall effect

ASJC Scopus subject areas

General Physics and Astronomy

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10.3938/jkps.62.1473

Cite this

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title = "Low field magnetization reversal behavior in GaMnAs films",

abstract = "The magnetization reversal process of a GaMnAs film has been investigated by using the planar Hall effect. The angle-dependent measurements of the planar Hall resistance that were performed with a field smaller than 60 Oe displayed new intermediate stable resistance values during the rotation of the external field direction over 360°. This phenomenon was understood by considering the formation of the multi-domain, whose magnetizations lie along two magnetic easy axes, and the differences in the domain-pinning fields that required for the transition between two easy axes. We further showed that the relative populations of the magnetic domains corresponding to the two orthogonal easy axes can be controlled by the value of the applied field during the process of magnetization reversal.",

keywords = "Anisotropy, Ferromagnetic semiconductor, Pinning field, Planar Hall effect",

author = "Yoonjung Gwon and Hyehyeon Byeon and Jaehyuk Won and Hakjoon Lee and Sanghoon Lee and X. Liu and Furdyna, {J. K.}",

note = "Funding Information: This research was supported by the Converging Research Center Program through the Ministry of Education, Science and Technology (2012K001244) by the National Research Foundation of Korea (NRF) Grant funded by the Government of Korea (MEST) 2012-045434, and by the National Science Foundation Grant DMR10-05851.",

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doi = "10.3938/jkps.62.1473",

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AU - Gwon, Yoonjung

AU - Byeon, Hyehyeon

AU - Won, Jaehyuk

AU - Lee, Hakjoon

AU - Lee, Sanghoon

AU - Liu, X.

AU - Furdyna, J. K.

N1 - Funding Information: This research was supported by the Converging Research Center Program through the Ministry of Education, Science and Technology (2012K001244) by the National Research Foundation of Korea (NRF) Grant funded by the Government of Korea (MEST) 2012-045434, and by the National Science Foundation Grant DMR10-05851.

PY - 2013

Y1 - 2013

N2 - The magnetization reversal process of a GaMnAs film has been investigated by using the planar Hall effect. The angle-dependent measurements of the planar Hall resistance that were performed with a field smaller than 60 Oe displayed new intermediate stable resistance values during the rotation of the external field direction over 360°. This phenomenon was understood by considering the formation of the multi-domain, whose magnetizations lie along two magnetic easy axes, and the differences in the domain-pinning fields that required for the transition between two easy axes. We further showed that the relative populations of the magnetic domains corresponding to the two orthogonal easy axes can be controlled by the value of the applied field during the process of magnetization reversal.

AB - The magnetization reversal process of a GaMnAs film has been investigated by using the planar Hall effect. The angle-dependent measurements of the planar Hall resistance that were performed with a field smaller than 60 Oe displayed new intermediate stable resistance values during the rotation of the external field direction over 360°. This phenomenon was understood by considering the formation of the multi-domain, whose magnetizations lie along two magnetic easy axes, and the differences in the domain-pinning fields that required for the transition between two easy axes. We further showed that the relative populations of the magnetic domains corresponding to the two orthogonal easy axes can be controlled by the value of the applied field during the process of magnetization reversal.

KW - Anisotropy

KW - Ferromagnetic semiconductor

KW - Pinning field

KW - Planar Hall effect

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JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

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Low field magnetization reversal behavior in GaMnAs films

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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