Low-frequency noise behavior of junctionless transistors compared to inversion-mode transistors

Dae Young Jeon, So Jeong Park, Mireille Mouis, Sylvain Barraud, Gyu Tae Kim, Gérard Ghibaudo

Research output: Contribution to journalArticlepeer-review

36 Citations (Scopus)


Low-frequency (LF) noise characteristics of wide planar junctionless transistors (JLTs) are investigated. Interestingly, carrier number fluctuation is the main contributor to the LF noise behavior of JLT devices, even though their bulk conduction features are clearly proved by the extracted flat-band voltage (Vfb). This is explained by the fact that mobile electrons in depletion, originating from the bulk neutral channel or source/drain regions, can interact with slow traps in the gate oxide, giving rise in return to fluctuations of the charge density in the bulk neutral channel. Similar values of trap density (Nt) are extracted in JLT devices and inversion-mode (IM) t0072ansistors, which also supports that the LF noise of JLT is well explained by the carrier number fluctuation model.

Original languageEnglish
Pages (from-to)101-104
Number of pages4
JournalSolid-State Electronics
Publication statusPublished - 2013

Bibliographical note

Funding Information:
This work was supported by European Union 7th Framework Program project SQWIRE under grant agreements No. 257111 and by the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Converging Research Center Program, 2012K001313 and Global Frontier Research Program, No. 2011-0031638). The authors also thank J.A. Chroboczek, D. Jang, M.-K. Joo and C. Theodorou for LF noise measurement set-up assistance.


  • Bulk conduction
  • Carrier number fluctuations
  • Flat-band voltage (V)
  • Junctionless transistors (JLTs)
  • Low-frequency (LF) noise
  • Trap density (N)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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