Low-frequency noise behavior of junctionless transistors compared to inversion-mode transistors

Dae Young Jeon; So Jeong Park; Mireille Mouis; Sylvain Barraud; Gyu Tae Kim; Gérard Ghibaudo

doi:10.1016/j.sse.2012.12.003

Low-frequency noise behavior of junctionless transistors compared to inversion-mode transistors

Dae Young Jeon, So Jeong Park, Mireille Mouis, Sylvain Barraud, Gyu Tae Kim, Gérard Ghibaudo

Research output: Contribution to journal › Article › peer-review

36 Citations (Scopus)

Abstract

Low-frequency (LF) noise characteristics of wide planar junctionless transistors (JLTs) are investigated. Interestingly, carrier number fluctuation is the main contributor to the LF noise behavior of JLT devices, even though their bulk conduction features are clearly proved by the extracted flat-band voltage (V_fb). This is explained by the fact that mobile electrons in depletion, originating from the bulk neutral channel or source/drain regions, can interact with slow traps in the gate oxide, giving rise in return to fluctuations of the charge density in the bulk neutral channel. Similar values of trap density (N_t) are extracted in JLT devices and inversion-mode (IM) t0072ansistors, which also supports that the LF noise of JLT is well explained by the carrier number fluctuation model.

Original language	English
Pages (from-to)	101-104
Number of pages	4
Journal	Solid-State Electronics
Volume	81
DOIs	https://doi.org/10.1016/j.sse.2012.12.003
Publication status	Published - 2013

Keywords

Bulk conduction
Carrier number fluctuations
Flat-band voltage (V)
Junctionless transistors (JLTs)
Low-frequency (LF) noise
Trap density (N)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2012.12.003

Cite this

@article{7f81f25fe8af4f0e9752e9ea3de1ba5f,

title = "Low-frequency noise behavior of junctionless transistors compared to inversion-mode transistors",

abstract = "Low-frequency (LF) noise characteristics of wide planar junctionless transistors (JLTs) are investigated. Interestingly, carrier number fluctuation is the main contributor to the LF noise behavior of JLT devices, even though their bulk conduction features are clearly proved by the extracted flat-band voltage (Vfb). This is explained by the fact that mobile electrons in depletion, originating from the bulk neutral channel or source/drain regions, can interact with slow traps in the gate oxide, giving rise in return to fluctuations of the charge density in the bulk neutral channel. Similar values of trap density (Nt) are extracted in JLT devices and inversion-mode (IM) t0072ansistors, which also supports that the LF noise of JLT is well explained by the carrier number fluctuation model.",

keywords = "Bulk conduction, Carrier number fluctuations, Flat-band voltage (V), Junctionless transistors (JLTs), Low-frequency (LF) noise, Trap density (N)",

author = "Jeon, {Dae Young} and Park, {So Jeong} and Mireille Mouis and Sylvain Barraud and Kim, {Gyu Tae} and G{\'e}rard Ghibaudo",

note = "Funding Information: This work was supported by European Union 7th Framework Program project SQWIRE under grant agreements No. 257111 and by the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Converging Research Center Program, 2012K001313 and Global Frontier Research Program, No. 2011-0031638). The authors also thank J.A. Chroboczek, D. Jang, M.-K. Joo and C. Theodorou for LF noise measurement set-up assistance.",

year = "2013",

doi = "10.1016/j.sse.2012.12.003",

language = "English",

volume = "81",

pages = "101--104",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

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TY - JOUR

T1 - Low-frequency noise behavior of junctionless transistors compared to inversion-mode transistors

AU - Jeon, Dae Young

AU - Park, So Jeong

AU - Mouis, Mireille

AU - Barraud, Sylvain

AU - Kim, Gyu Tae

AU - Ghibaudo, Gérard

N1 - Funding Information: This work was supported by European Union 7th Framework Program project SQWIRE under grant agreements No. 257111 and by the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Converging Research Center Program, 2012K001313 and Global Frontier Research Program, No. 2011-0031638). The authors also thank J.A. Chroboczek, D. Jang, M.-K. Joo and C. Theodorou for LF noise measurement set-up assistance.

PY - 2013

Y1 - 2013

N2 - Low-frequency (LF) noise characteristics of wide planar junctionless transistors (JLTs) are investigated. Interestingly, carrier number fluctuation is the main contributor to the LF noise behavior of JLT devices, even though their bulk conduction features are clearly proved by the extracted flat-band voltage (Vfb). This is explained by the fact that mobile electrons in depletion, originating from the bulk neutral channel or source/drain regions, can interact with slow traps in the gate oxide, giving rise in return to fluctuations of the charge density in the bulk neutral channel. Similar values of trap density (Nt) are extracted in JLT devices and inversion-mode (IM) t0072ansistors, which also supports that the LF noise of JLT is well explained by the carrier number fluctuation model.

AB - Low-frequency (LF) noise characteristics of wide planar junctionless transistors (JLTs) are investigated. Interestingly, carrier number fluctuation is the main contributor to the LF noise behavior of JLT devices, even though their bulk conduction features are clearly proved by the extracted flat-band voltage (Vfb). This is explained by the fact that mobile electrons in depletion, originating from the bulk neutral channel or source/drain regions, can interact with slow traps in the gate oxide, giving rise in return to fluctuations of the charge density in the bulk neutral channel. Similar values of trap density (Nt) are extracted in JLT devices and inversion-mode (IM) t0072ansistors, which also supports that the LF noise of JLT is well explained by the carrier number fluctuation model.

KW - Bulk conduction

KW - Carrier number fluctuations

KW - Flat-band voltage (V)

KW - Junctionless transistors (JLTs)

KW - Low-frequency (LF) noise

KW - Trap density (N)

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SP - 101

EP - 104

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

Low-frequency noise behavior of junctionless transistors compared to inversion-mode transistors

Abstract

Keywords

ASJC Scopus subject areas

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