Low-frequency noise characterization of ZnO nanorod back-gate field-effect transistor structure

Jungil Lee, Byung Yong Yu, Chul Ho Lee, Gyu Chul Yi, Seung Hun Son, Gyu Tae Kim, Gerard Ghibaudo

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


We report the results of low-frequency noise characterizations of back-gate n-channel ZnO nanorod field-effect transistor (FET) structure at room temperature. The noise in source-drain current was measured at zero gate bias and different source-drain biases. The power spectral density of noise current showed, in general, 1/f behavior with some variations. The power index of current dependence of the noise density at 10 Hz was about 1.5. The Hooge parameter obtained from the noise density at 10 Hz was comparable to or smaller than carbon nanotube transistors and much higher than those of silicon nanowires and conventional silicon transistors, indicating that special attention should be addressed to low-frequency noise in device applications. Possible noise sources are discussed with different models.

Original languageEnglish
Pages (from-to)2147-2149
Number of pages3
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number6
Publication statusPublished - 2008 Apr

Bibliographical note

Funding Information:
This work was supported by CPN, KIST-CNRS LIA program and Korean side is supported by KICOS through a Grant no. M60605000007-06A500-00710.


  • Field-effect transistors
  • Low-frequency noise
  • Surface states
  • ZnO nanorod

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics


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