We report the results of low-frequency noise characterizations of back-gate n-channel ZnO nanorod field-effect transistor (FET) structure at room temperature. The noise in source-drain current was measured at zero gate bias and different source-drain biases. The power spectral density of noise current showed, in general, 1/f behavior with some variations. The power index of current dependence of the noise density at 10 Hz was about 1.5. The Hooge parameter obtained from the noise density at 10 Hz was comparable to or smaller than carbon nanotube transistors and much higher than those of silicon nanowires and conventional silicon transistors, indicating that special attention should be addressed to low-frequency noise in device applications. Possible noise sources are discussed with different models.
|Number of pages
|Physica E: Low-Dimensional Systems and Nanostructures
|Published - 2008 Apr
Bibliographical noteFunding Information:
This work was supported by CPN, KIST-CNRS LIA program and Korean side is supported by KICOS through a Grant no. M60605000007-06A500-00710.
- Field-effect transistors
- Low-frequency noise
- Surface states
- ZnO nanorod
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics