Low-frequency noise in n-type junctionless multigate transistors was investigated. It can be well understood with the carrier number fluctuations whereas the conduction is mainly limited by the bulk expecting Hooge mobility fluctuations. The trapping/release of charge carriers is related not only to the oxide-semiconductor interface but also to the depleted channel. The volume trap density is in the range of 6-30× 1016 cm-3 eV-1, which is similar to Si- SiO2 bulk transistors and remarkably lower than in high- k transistors. These results show that the noise in nanowire devices might be affected by additional trapping centers.
Bibliographical noteFunding Information:
This work has been partly supported by European project SQWIRE under Grant Agreement No. 257111, National Research Foundation of Korea (NRF) grant (Converging Research Center program, Grant No. 2010K000981, WCU Grant No. R32-2008-000-10082-0, GRL Grant No. M6060500007-06A0500-00710, 2005-2002369), CNRS-KIST LIA collaboration, Nanoscience Foundation, Science Foundation Ireland under Grant No. 05/IN/I888, and European Community (EC) Seventh Framework Program through the Networks of Excellence NANOSIL and EUROSOI+ under Contract Nos. 216171 and 216373.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)