Low-frequency noise in strained SiGe core-shell nanowire p-channel field effect transistors

Doyoung Jang, Jae Woo Lee, Kiichi Tachi, Laurent Montes, Thomas Ernst, Gyu Tae Kim, Gerard Ghibaudo

Research output: Contribution to journalArticlepeer-review

27 Citations (Scopus)


Low-frequency noise has been studied in compressively strained Si 0.8Ge0.2 core-shell nanowire (NW) p-channel transistors compared with unstrained NWs. The noise has been well interpreted using the carrier number with correlated mobility fluctuation model. The volume trap density, Nt, lies in the range of 2.9× 1018 -4.3× 1019 cm-3 eV-1, which is similar to standard high- k planar devices. The impact of Coulomb and surface roughness scatterings is more significant in unstrained SiGe NWs. This result can be explained by the better carrier confinement at the central region of SiGe NWs due to the additional band offset in the compressively strained NWs.

Original languageEnglish
Article number073505
JournalApplied Physics Letters
Issue number7
Publication statusPublished - 2010 Aug 16

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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