Low-frequency noise in strained SiGe core-shell nanowire p-channel field effect transistors

Doyoung Jang; Jae Woo Lee; Kiichi Tachi; Laurent Montes; Thomas Ernst; Gyu Tae Kim; Gerard Ghibaudo

doi:10.1063/1.3480424

Low-frequency noise in strained SiGe core-shell nanowire p-channel field effect transistors

Doyoung Jang, Jae Woo Lee, Kiichi Tachi, Laurent Montes, Thomas Ernst, Gyu Tae Kim, Gerard Ghibaudo

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

Low-frequency noise has been studied in compressively strained Si _0.8Ge_0.2 core-shell nanowire (NW) p-channel transistors compared with unstrained NWs. The noise has been well interpreted using the carrier number with correlated mobility fluctuation model. The volume trap density, N_t, lies in the range of 2.9× 10¹⁸ -4.3× 10¹⁹ cm^-3 eV^-1, which is similar to standard high- k planar devices. The impact of Coulomb and surface roughness scatterings is more significant in unstrained SiGe NWs. This result can be explained by the better carrier confinement at the central region of SiGe NWs due to the additional band offset in the compressively strained NWs.

Original language	English
Article number	073505
Journal	Applied Physics Letters
Volume	97
Issue number	7
DOIs	https://doi.org/10.1063/1.3480424
Publication status	Published - 2010 Aug 16

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3480424

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title = "Low-frequency noise in strained SiGe core-shell nanowire p-channel field effect transistors",

abstract = "Low-frequency noise has been studied in compressively strained Si 0.8Ge0.2 core-shell nanowire (NW) p-channel transistors compared with unstrained NWs. The noise has been well interpreted using the carrier number with correlated mobility fluctuation model. The volume trap density, Nt, lies in the range of 2.9× 1018 -4.3× 1019 cm-3 eV-1, which is similar to standard high- k planar devices. The impact of Coulomb and surface roughness scatterings is more significant in unstrained SiGe NWs. This result can be explained by the better carrier confinement at the central region of SiGe NWs due to the additional band offset in the compressively strained NWs.",

author = "Doyoung Jang and Lee, {Jae Woo} and Kiichi Tachi and Laurent Montes and Thomas Ernst and Kim, {Gyu Tae} and Gerard Ghibaudo",

note = "Funding Information: This work was performed as part of the RTRA Core project and supported by region Rh{\^o}ne-Alpes, NRF (Grant No. 2009-0083380), and WCU R322009000100820 (Grant No. 20090082826).",

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AU - Jang, Doyoung

AU - Lee, Jae Woo

AU - Tachi, Kiichi

AU - Montes, Laurent

AU - Ernst, Thomas

AU - Kim, Gyu Tae

AU - Ghibaudo, Gerard

N1 - Funding Information: This work was performed as part of the RTRA Core project and supported by region Rhône-Alpes, NRF (Grant No. 2009-0083380), and WCU R322009000100820 (Grant No. 20090082826).

PY - 2010/8/16

Y1 - 2010/8/16

N2 - Low-frequency noise has been studied in compressively strained Si 0.8Ge0.2 core-shell nanowire (NW) p-channel transistors compared with unstrained NWs. The noise has been well interpreted using the carrier number with correlated mobility fluctuation model. The volume trap density, Nt, lies in the range of 2.9× 1018 -4.3× 1019 cm-3 eV-1, which is similar to standard high- k planar devices. The impact of Coulomb and surface roughness scatterings is more significant in unstrained SiGe NWs. This result can be explained by the better carrier confinement at the central region of SiGe NWs due to the additional band offset in the compressively strained NWs.

AB - Low-frequency noise has been studied in compressively strained Si 0.8Ge0.2 core-shell nanowire (NW) p-channel transistors compared with unstrained NWs. The noise has been well interpreted using the carrier number with correlated mobility fluctuation model. The volume trap density, Nt, lies in the range of 2.9× 1018 -4.3× 1019 cm-3 eV-1, which is similar to standard high- k planar devices. The impact of Coulomb and surface roughness scatterings is more significant in unstrained SiGe NWs. This result can be explained by the better carrier confinement at the central region of SiGe NWs due to the additional band offset in the compressively strained NWs.

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Low-frequency noise in strained SiGe core-shell nanowire p-channel field effect transistors

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