Low parasitic resistance process in low-temperature polycrystalline thin film transistors using Ni-silicide

Yong Duck Son; Kyu Sik Cho; Jong Uk Kwak; Jin Jang; Won Kyu Park; Dong Hwan Kim

Low parasitic resistance process in low-temperature polycrystalline thin film transistors using Ni-silicide

Yong Duck Son, Kyu Sik Cho, Jong Uk Kwak, Jin Jang, Won Kyu Park, Dong Hwan Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

We have studied a poly crystalline silicon thin-film-transistor (poly-Si TFT) process that has very low parasitic resistance by using a Ni-silicide. The poly-Si TFT characteristics having Ni-silicide source/drain region were compared with a conventional ion-doped source/drain region TFT. On reducing the source/drain parasitic resistance, the transconductance of poly-Si TFT increases. The poly-Si TFT having a Ni-silicide source/drain region shows a higher field effect mobility than conventional ion-doped source/drain poly-Si TFT. The poly-Si TFT using a Ni-silicide source/drain exhibited a field-effect mobility of 60 cm²/Vs, and a sheet resistance at the source/drain region of 200 ω/sq.

Original language	English
Pages (from-to)	S176-S178
Journal	Journal of the Korean Physical Society
Volume	42
Issue number	SPEC.
Publication status	Published - 2003 Feb
Event	Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 - Cheju Island, Korea, Republic of Duration: 2002 Aug 20 → 2002 Aug 23

Keywords

LTPS TFT
Ni-silicide
Parastic resistance

ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

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title = "Low parasitic resistance process in low-temperature polycrystalline thin film transistors using Ni-silicide",

abstract = "We have studied a poly crystalline silicon thin-film-transistor (poly-Si TFT) process that has very low parasitic resistance by using a Ni-silicide. The poly-Si TFT characteristics having Ni-silicide source/drain region were compared with a conventional ion-doped source/drain region TFT. On reducing the source/drain parasitic resistance, the transconductance of poly-Si TFT increases. The poly-Si TFT having a Ni-silicide source/drain region shows a higher field effect mobility than conventional ion-doped source/drain poly-Si TFT. The poly-Si TFT using a Ni-silicide source/drain exhibited a field-effect mobility of 60 cm2/Vs, and a sheet resistance at the source/drain region of 200 ω/sq.",

keywords = "LTPS TFT, Ni-silicide, Parastic resistance",

author = "Son, {Yong Duck} and Cho, {Kyu Sik} and Kwak, {Jong Uk} and Jin Jang and Park, {Won Kyu} and Kim, {Dong Hwan}",

year = "2003",

month = feb,

language = "English",

volume = "42",

pages = "S176--S178",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "SPEC.",

note = "Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 ; Conference date: 20-08-2002 Through 23-08-2002",

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TY - JOUR

T1 - Low parasitic resistance process in low-temperature polycrystalline thin film transistors using Ni-silicide

AU - Son, Yong Duck

AU - Cho, Kyu Sik

AU - Kwak, Jong Uk

AU - Jang, Jin

AU - Park, Won Kyu

AU - Kim, Dong Hwan

PY - 2003/2

Y1 - 2003/2

N2 - We have studied a poly crystalline silicon thin-film-transistor (poly-Si TFT) process that has very low parasitic resistance by using a Ni-silicide. The poly-Si TFT characteristics having Ni-silicide source/drain region were compared with a conventional ion-doped source/drain region TFT. On reducing the source/drain parasitic resistance, the transconductance of poly-Si TFT increases. The poly-Si TFT having a Ni-silicide source/drain region shows a higher field effect mobility than conventional ion-doped source/drain poly-Si TFT. The poly-Si TFT using a Ni-silicide source/drain exhibited a field-effect mobility of 60 cm2/Vs, and a sheet resistance at the source/drain region of 200 ω/sq.

AB - We have studied a poly crystalline silicon thin-film-transistor (poly-Si TFT) process that has very low parasitic resistance by using a Ni-silicide. The poly-Si TFT characteristics having Ni-silicide source/drain region were compared with a conventional ion-doped source/drain region TFT. On reducing the source/drain parasitic resistance, the transconductance of poly-Si TFT increases. The poly-Si TFT having a Ni-silicide source/drain region shows a higher field effect mobility than conventional ion-doped source/drain poly-Si TFT. The poly-Si TFT using a Ni-silicide source/drain exhibited a field-effect mobility of 60 cm2/Vs, and a sheet resistance at the source/drain region of 200 ω/sq.

KW - LTPS TFT

KW - Ni-silicide

KW - Parastic resistance

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M3 - Conference article

AN - SCOPUS:0037306354

SN - 0374-4884

VL - 42

SP - S176-S178

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - SPEC.

T2 - Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002

Y2 - 20 August 2002 through 23 August 2002

ER -

Low parasitic resistance process in low-temperature polycrystalline thin film transistors using Ni-silicide

Abstract

Keywords

ASJC Scopus subject areas

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