Abstract
An n-channel metal oxide semiconductor (NMOS) energy recovery logic (NERL) which exhibits high throughput with low energy consumption due to efficient energy transfer and recovery using bootstrapping is proposed. NERL also shows a full output voltage swing, insensitive to the output load capacitance, and is less dependent on the power clock frequency. Simulation results showed that significant energy savings could be realized with small area penalty.
Original language | English |
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Pages (from-to) | 1349-1350 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 36 |
Issue number | 16 |
DOIs | |
Publication status | Published - 2000 Aug 3 |
Externally published | Yes |
ASJC Scopus subject areas
- Electrical and Electronic Engineering