Low-power functionality of silicon-nanowire-assembled inverters on bendable plastics

Youngin Jeon; Myeongwon Lee; Minsuk Kim; Yoonjoong Kim; Sangsig Kim

doi:10.1007/s12274-016-1036-7

Low-power functionality of silicon-nanowire-assembled inverters on bendable plastics

Youngin Jeon, Myeongwon Lee, Minsuk Kim, Yoonjoong Kim, Sangsig Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

In this paper, we demonstrate the low-power functionality of silicon nanowire (SiNW)-assembled inverters on bendable plastics. Our bendable inverters are capable of operating at supply voltages as low as 0.8 V with a switching (or standby) power consumption of ∼0.2 nW (or ∼6.6 pW). The low-power inverting operation with a voltage gain of ∼18 is attributable to the near-ideal characteristics of the component transistors that have selectively thinned SiNW channels and exhibit low, symmetrical threshold voltages of 0.40 and −0.39 V and low sub-threshold swing values of 81 and 65 mV/dec. Moreover, mechanical bendability reveals that the inverting operation has good, stable fatigue properties. [Figure not available: see fulltext.]

Original language	English
Pages (from-to)	1409-1417
Number of pages	9
Journal	Nano Research
Volume	9
Issue number	5
DOIs	https://doi.org/10.1007/s12274-016-1036-7
Publication status	Published - 2016 May 1

Bibliographical note

Publisher Copyright:
© 2016, Tsinghua University Press and Springer-Verlag Berlin Heidelberg.

Keywords

bendable electronics
inverter
low-power functionality
silicon nanowire

ASJC Scopus subject areas

Condensed Matter Physics
Atomic and Molecular Physics, and Optics
General Materials Science
Electrical and Electronic Engineering

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10.1007/s12274-016-1036-7

Cite this

@article{53e240eaa9b449dfbfd649ca13893065,

title = "Low-power functionality of silicon-nanowire-assembled inverters on bendable plastics",

abstract = "In this paper, we demonstrate the low-power functionality of silicon nanowire (SiNW)-assembled inverters on bendable plastics. Our bendable inverters are capable of operating at supply voltages as low as 0.8 V with a switching (or standby) power consumption of ∼0.2 nW (or ∼6.6 pW). The low-power inverting operation with a voltage gain of ∼18 is attributable to the near-ideal characteristics of the component transistors that have selectively thinned SiNW channels and exhibit low, symmetrical threshold voltages of 0.40 and −0.39 V and low sub-threshold swing values of 81 and 65 mV/dec. Moreover, mechanical bendability reveals that the inverting operation has good, stable fatigue properties. [Figure not available: see fulltext.]",

keywords = "bendable electronics, inverter, low-power functionality, silicon nanowire",

author = "Youngin Jeon and Myeongwon Lee and Minsuk Kim and Yoonjoong Kim and Sangsig Kim",

note = "Publisher Copyright: {\textcopyright} 2016, Tsinghua University Press and Springer-Verlag Berlin Heidelberg.",

year = "2016",

month = may,

day = "1",

doi = "10.1007/s12274-016-1036-7",

language = "English",

volume = "9",

pages = "1409--1417",

journal = "Nano Research",

issn = "1998-0124",

publisher = "Press of Tsinghua University",

number = "5",

}

TY - JOUR

T1 - Low-power functionality of silicon-nanowire-assembled inverters on bendable plastics

AU - Jeon, Youngin

AU - Lee, Myeongwon

AU - Kim, Minsuk

AU - Kim, Yoonjoong

AU - Kim, Sangsig

PY - 2016/5/1

Y1 - 2016/5/1

N2 - In this paper, we demonstrate the low-power functionality of silicon nanowire (SiNW)-assembled inverters on bendable plastics. Our bendable inverters are capable of operating at supply voltages as low as 0.8 V with a switching (or standby) power consumption of ∼0.2 nW (or ∼6.6 pW). The low-power inverting operation with a voltage gain of ∼18 is attributable to the near-ideal characteristics of the component transistors that have selectively thinned SiNW channels and exhibit low, symmetrical threshold voltages of 0.40 and −0.39 V and low sub-threshold swing values of 81 and 65 mV/dec. Moreover, mechanical bendability reveals that the inverting operation has good, stable fatigue properties. [Figure not available: see fulltext.]

AB - In this paper, we demonstrate the low-power functionality of silicon nanowire (SiNW)-assembled inverters on bendable plastics. Our bendable inverters are capable of operating at supply voltages as low as 0.8 V with a switching (or standby) power consumption of ∼0.2 nW (or ∼6.6 pW). The low-power inverting operation with a voltage gain of ∼18 is attributable to the near-ideal characteristics of the component transistors that have selectively thinned SiNW channels and exhibit low, symmetrical threshold voltages of 0.40 and −0.39 V and low sub-threshold swing values of 81 and 65 mV/dec. Moreover, mechanical bendability reveals that the inverting operation has good, stable fatigue properties. [Figure not available: see fulltext.]

KW - bendable electronics

KW - inverter

KW - low-power functionality

KW - silicon nanowire

UR - http://www.scopus.com/inward/record.url?scp=84961774656&partnerID=8YFLogxK

U2 - 10.1007/s12274-016-1036-7

DO - 10.1007/s12274-016-1036-7

M3 - Article

AN - SCOPUS:84961774656

SN - 1998-0124

VL - 9

SP - 1409

EP - 1417

JO - Nano Research

JF - Nano Research

IS - 5

ER -

Low-power functionality of silicon-nanowire-assembled inverters on bendable plastics

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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