Low power NiN-based resistive switching memory device using Ti doping

In this study, we investigated the properties of Ti-doped NiN-based resistive switching random access memories (ReRAMs) in comparison with both Al-doped and conventional NiN-based samples. The Ti dopants form metallic TiN particles in the nitride film, which induce local electric fields during the forming process causing filaments to form close to the TiN clusters. The TiN components in the filaments reduce the current level for the high resistive switching state (HRS) and low resistive switching state (LRS). In our testing, the Ti-doped sample had a current of 10 nA in the HRS and 23 μA in the LRS with a high on/off ratio (>10³). This implies that the Ti doping effect enabled the sample to operate at low power. Furthermore, the Ti-doped samples also exhibited highly uniform operating parameters. In terms of reliability, the retention was measured to be >10⁶s at 85 °C, and the endurance was found to be at least 10⁷ cycles. These results indicate that Ti-doped NiN-based ReRAM devices have significant advantages over other approaches for future nonvolatile memory devices.