Low Power SOT-MRAM Cell Configuration for Dual Write Operation

Jooyoon Kim, Kwanho Bae, Jongsun Park

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    2 Citations (Scopus)

    Abstract

    Due to the leakage power of CMOS-based memory, Nonvolatile magnetic memory is considered a strong candidate to replace the CMOS-based memory. Spin transfer torque magnetic random access memory (STT-MRAM) is one of the most promising candidates, but it still has many shortcomings related to the write operation. Compared to STT-MRAM, spin orbit torque magnetic random access memory (SOT-MRAM) is the next generation of nonvolatile magnetic memory because of its relatively good performance and low power. Although SOT-MRAM has various advantages over STT-MRAM, a significant reduction in write power is required to meet the power level of CMOS-based memory. In this paper, we present a low power SOT-MRAM cell configuration using the dual write operation. By writing on two cells simultaneously, write energy can be reduced depending on data patterns. Compared to the conventional 2T-1MTJ SOT-MRAM, the proposed SOT-MRAM cell with the dual write scheme reduces the write energy by 26.3% on average.

    Original languageEnglish
    Title of host publication2021 International Conference on Electronics, Information, and Communication, ICEIC 2021
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    ISBN (Electronic)9781728191614
    DOIs
    Publication statusPublished - 2021 Jan 31
    Event2021 International Conference on Electronics, Information, and Communication, ICEIC 2021 - Jeju, Korea, Republic of
    Duration: 2021 Jan 312021 Feb 3

    Publication series

    Name2021 International Conference on Electronics, Information, and Communication, ICEIC 2021

    Conference

    Conference2021 International Conference on Electronics, Information, and Communication, ICEIC 2021
    Country/TerritoryKorea, Republic of
    CityJeju
    Period21/1/3121/2/3

    Bibliographical note

    Publisher Copyright:
    © 2021 IEEE.

    Keywords

    • Magnetic Tunnel Junction (MTJ)
    • Nonvolatile memory
    • Spin-Orbit Torque(SOT)
    • Spin-Transfer Torque (STT)

    ASJC Scopus subject areas

    • Artificial Intelligence
    • Computer Networks and Communications
    • Information Systems
    • Information Systems and Management
    • Electrical and Electronic Engineering
    • Instrumentation

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