Abstract
Due to the leakage power of CMOS-based memory, Nonvolatile magnetic memory is considered a strong candidate to replace the CMOS-based memory. Spin transfer torque magnetic random access memory (STT-MRAM) is one of the most promising candidates, but it still has many shortcomings related to the write operation. Compared to STT-MRAM, spin orbit torque magnetic random access memory (SOT-MRAM) is the next generation of nonvolatile magnetic memory because of its relatively good performance and low power. Although SOT-MRAM has various advantages over STT-MRAM, a significant reduction in write power is required to meet the power level of CMOS-based memory. In this paper, we present a low power SOT-MRAM cell configuration using the dual write operation. By writing on two cells simultaneously, write energy can be reduced depending on data patterns. Compared to the conventional 2T-1MTJ SOT-MRAM, the proposed SOT-MRAM cell with the dual write scheme reduces the write energy by 26.3% on average.
Original language | English |
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Title of host publication | 2021 International Conference on Electronics, Information, and Communication, ICEIC 2021 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Electronic) | 9781728191614 |
DOIs | |
Publication status | Published - 2021 Jan 31 |
Event | 2021 International Conference on Electronics, Information, and Communication, ICEIC 2021 - Jeju, Korea, Republic of Duration: 2021 Jan 31 → 2021 Feb 3 |
Publication series
Name | 2021 International Conference on Electronics, Information, and Communication, ICEIC 2021 |
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Conference
Conference | 2021 International Conference on Electronics, Information, and Communication, ICEIC 2021 |
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Country/Territory | Korea, Republic of |
City | Jeju |
Period | 21/1/31 → 21/2/3 |
Bibliographical note
Publisher Copyright:© 2021 IEEE.
Keywords
- Magnetic Tunnel Junction (MTJ)
- Nonvolatile memory
- Spin-Orbit Torque(SOT)
- Spin-Transfer Torque (STT)
ASJC Scopus subject areas
- Artificial Intelligence
- Computer Networks and Communications
- Information Systems
- Information Systems and Management
- Electrical and Electronic Engineering
- Instrumentation