Abstract
The crossbar array-based resistive memory is considered a potential architecture for high-density nonvolatile memory applications. However, the sneak current path problem associated with the crossbar array structure limits its use in practical applications. This limitation can be removed by employing a selector device in the crossbar array structure. Therefore, we propose NbO2 as a selector device as it operates at a rapid speed during the insulator-metal transition (IMT). Herein, we fabricated a Ti-doped NbO2 selector device and demonstrated a very low OFF current (5 × 10-11 A). The effect of Ti doping in the NbO2 device was studied by varying the Ti concentration during a radio frequency co-sputtering process. We intentionally prevented the formation of Nb2O5, and a high-quality NbO2 layer was deposited with an appropriate Ti concentration. Furthermore, we modulated the IMT characteristics of the NbO2 device by varying the Ti concentration. The fabricated Ti-doped NbO2 selector device showed an ION/IOFF ratio greater than 5 × 104. Additionally, a drift-free fast switching operation (<20 ns) was achieved for the optimized selector device. These results suggest the high suitability of IMT-based NbO2 devices in selector applications.
Original language | English |
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Article number | 161041 |
Journal | Journal of Alloys and Compounds |
Volume | 884 |
DOIs | |
Publication status | Published - 2021 Dec 5 |
Bibliographical note
Funding Information:This work was supported by the National Research Foundation of Korea (NRF) Grant funded by the Korean government under Grant No. 2016R1A3B1908249 .
Publisher Copyright:
© 2021 Elsevier B.V.
Keywords
- Co-sputtering
- Crossbar array
- Insulator-metal transition
- NbO
- Resistive switching
- Ti doping
ASJC Scopus subject areas
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys
- Materials Chemistry