Low resistance and highly reflective Sb-doped SnO2/Ag ohmic contacts to p-type GaN for flip-chip LEDs

Dong Seok Leem; June O. Song; Hyun Gi Hong; J. S. Kwak; Y. Park; Tae Yeon Seong

doi:10.1149/1.1789853

Low resistance and highly reflective Sb-doped SnO²/Ag ohmic contacts to p-type GaN for flip-chip LEDs

Dong Seok Leem, June O. Song, Hyun Gi Hong, J. S. Kwak, Y. Park, Tae Yeon Seong

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

We have investigated high-quality Sb-doped SnO₂/Ag ohmic contacts to p-GaN for use in flip-chip light emitting diodes (LEDs). The Sb-doped SnO₂/Ag contacts produce specific contact resistances of ∼10^-4 Ω cm² upon annealing at 430 and 530°C for 1 min in air. It is shown that InGaN blue LEDs fabricated with the Sb-doped SnO₂/Ag contacts give a forward-bias voltage of 3.18 V at 20 mA, while LEDs with Ag contacts show 3.36 V. It is further shown that the LEDs made with the Sb-doped SnO₂/Ag contact layers show higher light output power compared with the LEDs with the Ag contacts.

Original language	English
Pages (from-to)	G219-G221
Journal	Electrochemical and Solid-State Letters
Volume	7
Issue number	10
DOIs	https://doi.org/10.1149/1.1789853
Publication status	Published - 2004
Externally published	Yes

ASJC Scopus subject areas

General Chemical Engineering
General Materials Science
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

Access to Document

10.1149/1.1789853

Cite this

@article{ccca2530c8054e228e524d59d48052c5,

title = "Low resistance and highly reflective Sb-doped SnO2/Ag ohmic contacts to p-type GaN for flip-chip LEDs",

abstract = "We have investigated high-quality Sb-doped SnO2/Ag ohmic contacts to p-GaN for use in flip-chip light emitting diodes (LEDs). The Sb-doped SnO2/Ag contacts produce specific contact resistances of ∼10-4 Ω cm2 upon annealing at 430 and 530°C for 1 min in air. It is shown that InGaN blue LEDs fabricated with the Sb-doped SnO2/Ag contacts give a forward-bias voltage of 3.18 V at 20 mA, while LEDs with Ag contacts show 3.36 V. It is further shown that the LEDs made with the Sb-doped SnO2/Ag contact layers show higher light output power compared with the LEDs with the Ag contacts.",

author = "Leem, {Dong Seok} and Song, {June O.} and Hong, {Hyun Gi} and Kwak, {J. S.} and Y. Park and Seong, {Tae Yeon}",

year = "2004",

doi = "10.1149/1.1789853",

language = "English",

volume = "7",

pages = "G219--G221",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society Inc.",

number = "10",

}

TY - JOUR

T1 - Low resistance and highly reflective Sb-doped SnO2/Ag ohmic contacts to p-type GaN for flip-chip LEDs

AU - Leem, Dong Seok

AU - Song, June O.

AU - Hong, Hyun Gi

AU - Kwak, J. S.

AU - Park, Y.

AU - Seong, Tae Yeon

PY - 2004

Y1 - 2004

N2 - We have investigated high-quality Sb-doped SnO2/Ag ohmic contacts to p-GaN for use in flip-chip light emitting diodes (LEDs). The Sb-doped SnO2/Ag contacts produce specific contact resistances of ∼10-4 Ω cm2 upon annealing at 430 and 530°C for 1 min in air. It is shown that InGaN blue LEDs fabricated with the Sb-doped SnO2/Ag contacts give a forward-bias voltage of 3.18 V at 20 mA, while LEDs with Ag contacts show 3.36 V. It is further shown that the LEDs made with the Sb-doped SnO2/Ag contact layers show higher light output power compared with the LEDs with the Ag contacts.

AB - We have investigated high-quality Sb-doped SnO2/Ag ohmic contacts to p-GaN for use in flip-chip light emitting diodes (LEDs). The Sb-doped SnO2/Ag contacts produce specific contact resistances of ∼10-4 Ω cm2 upon annealing at 430 and 530°C for 1 min in air. It is shown that InGaN blue LEDs fabricated with the Sb-doped SnO2/Ag contacts give a forward-bias voltage of 3.18 V at 20 mA, while LEDs with Ag contacts show 3.36 V. It is further shown that the LEDs made with the Sb-doped SnO2/Ag contact layers show higher light output power compared with the LEDs with the Ag contacts.

UR - http://www.scopus.com/inward/record.url?scp=8344238872&partnerID=8YFLogxK

U2 - 10.1149/1.1789853

DO - 10.1149/1.1789853

M3 - Article

AN - SCOPUS:8344238872

SN - 1099-0062

VL - 7

SP - G219-G221

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 10

ER -

Low resistance and highly reflective Sb-doped SnO²/Ag ohmic contacts to p-type GaN for flip-chip LEDs

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this