Low-resistance and reflective Ni/Rh and Ni/Au/Rh contacts to p-GaN for flip-chip LEDs

Jeong Woo Park; June O. Song; Dong Seok Leem; Tae Yeon Seong

doi:10.1149/1.1830391

Low-resistance and reflective Ni/Rh and Ni/Au/Rh contacts to p-GaN for flip-chip LEDs

Jeong Woo Park, June O. Song, Dong Seok Leem, Tae Yeon Seong

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We report on the formation of high-quality ohmic contacts to p-type GaN (4 × 10¹⁷ cm^-3) using Ni (5 nm)/Rh (120 nm) and Ni (5 nm)/Au (5 nm)/Rh (120 nm) schemes for use in flip-chip light-emitting diodes (LEDs). Both the Ni/Rh and Ni/Au/Rh contacts become ohmic with specific contact resistances of 10^-5 to 10^-6 Ω cm², when annealed at 350°C for 2 min in air ambient. LEDs are fabricated using the Ni/Au/Rh and Ni/Au contact layers, which give a forward-bias voltage of 3.32 and 3.45 V at injection current of 20 mA, respectively. This indicates that the Rh-based contacts could be suitable for high power flip-chip LEDs. All rights reserved.

Original language	English
Pages (from-to)	G17-G19
Journal	Electrochemical and Solid-State Letters
Volume	8
Issue number	1
DOIs	https://doi.org/10.1149/1.1830391
Publication status	Published - 2005
Externally published	Yes

ASJC Scopus subject areas

General Chemical Engineering
General Materials Science
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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10.1149/1.1830391

Cite this

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title = "Low-resistance and reflective Ni/Rh and Ni/Au/Rh contacts to p-GaN for flip-chip LEDs",

abstract = "We report on the formation of high-quality ohmic contacts to p-type GaN (4 × 1017 cm-3) using Ni (5 nm)/Rh (120 nm) and Ni (5 nm)/Au (5 nm)/Rh (120 nm) schemes for use in flip-chip light-emitting diodes (LEDs). Both the Ni/Rh and Ni/Au/Rh contacts become ohmic with specific contact resistances of 10-5 to 10-6 Ω cm2, when annealed at 350°C for 2 min in air ambient. LEDs are fabricated using the Ni/Au/Rh and Ni/Au contact layers, which give a forward-bias voltage of 3.32 and 3.45 V at injection current of 20 mA, respectively. This indicates that the Rh-based contacts could be suitable for high power flip-chip LEDs. All rights reserved.",

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AU - Park, Jeong Woo

AU - Song, June O.

AU - Leem, Dong Seok

AU - Seong, Tae Yeon

PY - 2005

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AB - We report on the formation of high-quality ohmic contacts to p-type GaN (4 × 1017 cm-3) using Ni (5 nm)/Rh (120 nm) and Ni (5 nm)/Au (5 nm)/Rh (120 nm) schemes for use in flip-chip light-emitting diodes (LEDs). Both the Ni/Rh and Ni/Au/Rh contacts become ohmic with specific contact resistances of 10-5 to 10-6 Ω cm2, when annealed at 350°C for 2 min in air ambient. LEDs are fabricated using the Ni/Au/Rh and Ni/Au contact layers, which give a forward-bias voltage of 3.32 and 3.45 V at injection current of 20 mA, respectively. This indicates that the Rh-based contacts could be suitable for high power flip-chip LEDs. All rights reserved.

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Low-resistance and reflective Ni/Rh and Ni/Au/Rh contacts to p-GaN for flip-chip LEDs

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