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Low-resistance and thermally stable indium tin oxide Ohmic contacts on strained p- In0.15 Ga0.85 Np-GaN layer
Ja Soon Jang
*
,
Tae Yeon Seong
*
Corresponding author for this work
Research output
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Contribution to journal
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Article
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peer-review
29
Citations (Scopus)
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Dive into the research topics of 'Low-resistance and thermally stable indium tin oxide Ohmic contacts on strained p- In0.15 Ga0.85 Np-GaN layer'. Together they form a unique fingerprint.
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Keyphrases
GaN Layers
100%
Ohmic Contact
100%
Indium Tin Oxide
100%
Low Resistance
100%
Thermally Stable
100%
Thermal Stability
66%
Annealing
66%
As-deposited
66%
Contact Resistivity
66%
P-GaN
66%
Current-voltage Characteristics
33%
Surface Morphology
33%
Specific Contact Resistance
33%
Ohmic Behavior
33%
Spectroscopic Data
33%
Contact Surface
33%
Polarization Effect
33%
Acceptor Concentration
33%
Paean
33%
AuGe
33%
Diffusion Barrier Layer
33%
Material Science
Indium Tin Oxide
100%
Thermal Stability
66%
Electrical Resistivity
66%
Current Voltage Characteristics
33%
Surface Morphology
33%
Contact Resistance
33%