Low-resistance and thermally stable Pd/Re ohmic contacts to p-type GaN

V. Rajagopal Reddy, Sang Ho Kim, June O. Song, Tae Yeon Seong

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


We have investigated a low-resistance thermally stable Pd/Re ohmic contact on moderately doped p-GaN:Mg (1.1 × 1017 cm-3). It is shown that the I-V characteristic of the as-deposited sample is improved upon annealing at 550 °C for 1 min under N2 ambient. However, annealing the sample at 650 °C results in the degradation of the I-V behaviour. Specific contact resistance as low as 8.7 × 10-4 ω cm2 is obtained from the Pd(20 nm)/Re(25 nm) contact annealed at 550 °C. It is also shown that the contact exhibits thermal stability during annealing at 550 °C. Auger electron microscopy and glancing angle x-ray diffraction studies are carried out to characterize interfacial reactions between the Pd/Re contacts and the GaN.

Original languageEnglish
Pages (from-to)541-544
Number of pages4
JournalSemiconductor Science and Technology
Issue number6
Publication statusPublished - 2003 Jun
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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