Low-resistance and thermally stable Pd/Ru ohmic contacts to p-type GaN

Ja Soon Jang; Chang Won Lee; Seong Ju Park; Tae Yeon Seong; I. T. Ferguson

doi:10.1007/s11664-002-0181-9

Low-resistance and thermally stable Pd/Ru ohmic contacts to p-type GaN

Ja Soon Jang, Chang Won Lee, Seong Ju Park, Tae Yeon Seong, I. T. Ferguson

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We report on low-resistance and thermally stable Pd/Ru ohmic contacts to surface-treated p-GaN (3 × 10¹⁷ cm^-3). It is shown that annealing at 500°C for 2 min in a N₂ ambient improves ohmic contact properties. Specific contact resistance is measured to be 9.2(±0.2) × 10^-4 and 2.4(±0.2) × 10^-5 Ωcm² for the as-deposited and annealed samples, respectively. Atomic force microscopy results show that the surfaces of both the contacts are remarkably smooth with a root-mean-square (rms) roughness of about 0.6 nm. The current-voltage-temperature (I-V-T) and calculation results indicate that, for the as-deposited contact, thermionic field emission is dominant, while for the annealed contact, field emission dominates the current flow.

Original language	English
Article number	181
Pages (from-to)	903-906
Number of pages	4
Journal	Journal of Electronic Materials
Volume	31
Issue number	9
DOIs	https://doi.org/10.1007/s11664-002-0181-9
Publication status	Published - 2002
Externally published	Yes

Keywords

Gallium nitride
Ohmic contact
Schottky barrier
Specific contact resistance
Surface Fermi level

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-002-0181-9

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@article{f69fdddac60e4186a2012d82f8d620fb,

title = "Low-resistance and thermally stable Pd/Ru ohmic contacts to p-type GaN",

abstract = "We report on low-resistance and thermally stable Pd/Ru ohmic contacts to surface-treated p-GaN (3 × 1017 cm-3). It is shown that annealing at 500°C for 2 min in a N2 ambient improves ohmic contact properties. Specific contact resistance is measured to be 9.2(±0.2) × 10-4 and 2.4(±0.2) × 10-5 Ωcm2 for the as-deposited and annealed samples, respectively. Atomic force microscopy results show that the surfaces of both the contacts are remarkably smooth with a root-mean-square (rms) roughness of about 0.6 nm. The current-voltage-temperature (I-V-T) and calculation results indicate that, for the as-deposited contact, thermionic field emission is dominant, while for the annealed contact, field emission dominates the current flow.",

keywords = "Gallium nitride, Ohmic contact, Schottky barrier, Specific contact resistance, Surface Fermi level",

author = "Jang, {Ja Soon} and Lee, {Chang Won} and Park, {Seong Ju} and Seong, {Tae Yeon} and Ferguson, {I. T.}",

note = "Funding Information: This work was supported in part by the Korea Institute of Industrial Technology Evaluation and Planning and the U.S. AFOSR/AOARD.",

year = "2002",

doi = "10.1007/s11664-002-0181-9",

language = "English",

volume = "31",

pages = "903--906",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "9",

}

TY - JOUR

T1 - Low-resistance and thermally stable Pd/Ru ohmic contacts to p-type GaN

AU - Jang, Ja Soon

AU - Lee, Chang Won

AU - Park, Seong Ju

AU - Seong, Tae Yeon

AU - Ferguson, I. T.

N1 - Funding Information: This work was supported in part by the Korea Institute of Industrial Technology Evaluation and Planning and the U.S. AFOSR/AOARD.

PY - 2002

Y1 - 2002

N2 - We report on low-resistance and thermally stable Pd/Ru ohmic contacts to surface-treated p-GaN (3 × 1017 cm-3). It is shown that annealing at 500°C for 2 min in a N2 ambient improves ohmic contact properties. Specific contact resistance is measured to be 9.2(±0.2) × 10-4 and 2.4(±0.2) × 10-5 Ωcm2 for the as-deposited and annealed samples, respectively. Atomic force microscopy results show that the surfaces of both the contacts are remarkably smooth with a root-mean-square (rms) roughness of about 0.6 nm. The current-voltage-temperature (I-V-T) and calculation results indicate that, for the as-deposited contact, thermionic field emission is dominant, while for the annealed contact, field emission dominates the current flow.

AB - We report on low-resistance and thermally stable Pd/Ru ohmic contacts to surface-treated p-GaN (3 × 1017 cm-3). It is shown that annealing at 500°C for 2 min in a N2 ambient improves ohmic contact properties. Specific contact resistance is measured to be 9.2(±0.2) × 10-4 and 2.4(±0.2) × 10-5 Ωcm2 for the as-deposited and annealed samples, respectively. Atomic force microscopy results show that the surfaces of both the contacts are remarkably smooth with a root-mean-square (rms) roughness of about 0.6 nm. The current-voltage-temperature (I-V-T) and calculation results indicate that, for the as-deposited contact, thermionic field emission is dominant, while for the annealed contact, field emission dominates the current flow.

KW - Gallium nitride

KW - Ohmic contact

KW - Schottky barrier

KW - Specific contact resistance

KW - Surface Fermi level

UR - http://www.scopus.com/inward/record.url?scp=0036738864&partnerID=8YFLogxK

U2 - 10.1007/s11664-002-0181-9

DO - 10.1007/s11664-002-0181-9

M3 - Article

AN - SCOPUS:0036738864

SN - 0361-5235

VL - 31

SP - 903

EP - 906

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 9

M1 - 181

ER -

Low-resistance and thermally stable Pd/Ru ohmic contacts to p-type GaN

Abstract

Keywords

ASJC Scopus subject areas

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