The low-resistance and transparent ohmic contacts on p-type GaN, produced using Zn-Ni solid solution/Au scheme, were studied. A comparative study of the An-Ni solid solution/Au schemes with commonly used Ni/Au scheme was also conducted. The current-voltage (I-V) measurements and x-ray photoelectron spectroscopy analysis were performed for the study of the ohmic contacts. Nonlinear I-V characteristics were exhibited by the contacts. It was observed that the contacts showed low specific contact resistances of ∼10 -5 ω cm2 and transparency higher than 74% at a wavelength of 470 nm, when annealed at 530 °C in air ambient.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 2004 Jun 7|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)