Low-resistance and transparent ohmic contacts to p-type GaN using Zn-Ni solid solution/Au scheme

June O. Song; Dong Seok Leem; Tae Yeon Seong

doi:10.1063/1.1759774

Low-resistance and transparent ohmic contacts to p-type GaN using Zn-Ni solid solution/Au scheme

June O. Song, Dong Seok Leem, Tae Yeon Seong

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

The low-resistance and transparent ohmic contacts on p-type GaN, produced using Zn-Ni solid solution/Au scheme, were studied. A comparative study of the An-Ni solid solution/Au schemes with commonly used Ni/Au scheme was also conducted. The current-voltage (I-V) measurements and x-ray photoelectron spectroscopy analysis were performed for the study of the ohmic contacts. Nonlinear I-V characteristics were exhibited by the contacts. It was observed that the contacts showed low specific contact resistances of ∼10 ^-5 ω cm² and transparency higher than 74% at a wavelength of 470 nm, when annealed at 530 °C in air ambient.

Original language	English
Pages (from-to)	4663-4665
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	23
DOIs	https://doi.org/10.1063/1.1759774
Publication status	Published - 2004 Jun 7
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1759774

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@article{6166213e04cd4360b79f8f408b202dca,

title = "Low-resistance and transparent ohmic contacts to p-type GaN using Zn-Ni solid solution/Au scheme",

abstract = "The low-resistance and transparent ohmic contacts on p-type GaN, produced using Zn-Ni solid solution/Au scheme, were studied. A comparative study of the An-Ni solid solution/Au schemes with commonly used Ni/Au scheme was also conducted. The current-voltage (I-V) measurements and x-ray photoelectron spectroscopy analysis were performed for the study of the ohmic contacts. Nonlinear I-V characteristics were exhibited by the contacts. It was observed that the contacts showed low specific contact resistances of ∼10 -5 ω cm2 and transparency higher than 74% at a wavelength of 470 nm, when annealed at 530 °C in air ambient.",

author = "Song, {June O.} and Leem, {Dong Seok} and Seong, {Tae Yeon}",

year = "2004",

month = jun,

day = "7",

doi = "10.1063/1.1759774",

language = "English",

volume = "84",

pages = "4663--4665",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "23",

}

TY - JOUR

T1 - Low-resistance and transparent ohmic contacts to p-type GaN using Zn-Ni solid solution/Au scheme

AU - Song, June O.

AU - Leem, Dong Seok

AU - Seong, Tae Yeon

PY - 2004/6/7

Y1 - 2004/6/7

N2 - The low-resistance and transparent ohmic contacts on p-type GaN, produced using Zn-Ni solid solution/Au scheme, were studied. A comparative study of the An-Ni solid solution/Au schemes with commonly used Ni/Au scheme was also conducted. The current-voltage (I-V) measurements and x-ray photoelectron spectroscopy analysis were performed for the study of the ohmic contacts. Nonlinear I-V characteristics were exhibited by the contacts. It was observed that the contacts showed low specific contact resistances of ∼10 -5 ω cm2 and transparency higher than 74% at a wavelength of 470 nm, when annealed at 530 °C in air ambient.

AB - The low-resistance and transparent ohmic contacts on p-type GaN, produced using Zn-Ni solid solution/Au scheme, were studied. A comparative study of the An-Ni solid solution/Au schemes with commonly used Ni/Au scheme was also conducted. The current-voltage (I-V) measurements and x-ray photoelectron spectroscopy analysis were performed for the study of the ohmic contacts. Nonlinear I-V characteristics were exhibited by the contacts. It was observed that the contacts showed low specific contact resistances of ∼10 -5 ω cm2 and transparency higher than 74% at a wavelength of 470 nm, when annealed at 530 °C in air ambient.

UR - http://www.scopus.com/inward/record.url?scp=3042596219&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3042596219&partnerID=8YFLogxK

U2 - 10.1063/1.1759774

DO - 10.1063/1.1759774

M3 - Article

AN - SCOPUS:3042596219

SN - 0003-6951

VL - 84

SP - 4663

EP - 4665

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

ER -

Low-resistance and transparent ohmic contacts to p-type GaN using Zn-Ni solid solution/Au scheme

Abstract

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