Low-resistance Cr/Al Ohmic contacts to N-polar n-type GaN for high-performance vertical light-emitting diodes

Joon Woo Jeon, Sang Youl Lee, June O. Song, Tae Yeon Seong

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

We investigated the electrical properties of Cr(30 nm)/Al(200 nm) contacts to N-polar n-type GaN for high-performance vertical light-emitting diodes and compare them with those of Ti(30 nm)/Al(200 nm) contacts. Before annealing, both the samples show ohmic behaviors with a contact resistivity of 1.9-2.3 × 10-4 Ωcm2. Upon annealing at 250 °C for 1 min in N2 ambient, the Ti/Al contacts become non-ohmic, while the Cr/Al contacts remain ohmic with a contact resistivity of 1.4 × 10-3 Ωcm2. Based on X-ray photoemission spectroscopy and secondary ion mass spectrometry results, ohmic formation and degradation mechanisms are briefly described and discussed.

Original languageEnglish
Pages (from-to)225-227
Number of pages3
JournalCurrent Applied Physics
Volume12
Issue number1
DOIs
Publication statusPublished - 2012 Jan

Bibliographical note

Funding Information:
This work was supported by the Korea Research Foundation Grant funded by the Korean Government ( KRF-2008-313-D00593 ), the Manpower Development Program for Energy & Resources of the Ministry of Knowledge and Economy (Grant no. 2008-E-AP-HM-P-16-0000 ), and the World Class University program through the National Research Foundation of Korea funded by the MEST ( R33-2008-000-10025-0 ).

Copyright:
Copyright 2011 Elsevier B.V., All rights reserved.

Keywords

  • Cr/Al
  • N-polar n-type GaN
  • Ohmic contact
  • Vertical light-emitting diode

ASJC Scopus subject areas

  • General Materials Science
  • General Physics and Astronomy

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