Low-resistance Cr/Al Ohmic contacts to N-polar n-type GaN for high-performance vertical light-emitting diodes

Joon Woo Jeon; Sang Youl Lee; June O. Song; Tae Yeon Seong

doi:10.1016/j.cap.2011.06.009

Low-resistance Cr/Al Ohmic contacts to N-polar n-type GaN for high-performance vertical light-emitting diodes

Joon Woo Jeon, Sang Youl Lee, June O. Song, Tae Yeon Seong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We investigated the electrical properties of Cr(30 nm)/Al(200 nm) contacts to N-polar n-type GaN for high-performance vertical light-emitting diodes and compare them with those of Ti(30 nm)/Al(200 nm) contacts. Before annealing, both the samples show ohmic behaviors with a contact resistivity of 1.9-2.3 × 10^-4 Ωcm². Upon annealing at 250 °C for 1 min in N₂ ambient, the Ti/Al contacts become non-ohmic, while the Cr/Al contacts remain ohmic with a contact resistivity of 1.4 × 10^-3 Ωcm². Based on X-ray photoemission spectroscopy and secondary ion mass spectrometry results, ohmic formation and degradation mechanisms are briefly described and discussed.

Original language	English
Pages (from-to)	225-227
Number of pages	3
Journal	Current Applied Physics
Volume	12
Issue number	1
DOIs	https://doi.org/10.1016/j.cap.2011.06.009
Publication status	Published - 2012 Jan

Keywords

Cr/Al
N-polar n-type GaN
Ohmic contact
Vertical light-emitting diode

ASJC Scopus subject areas

Materials Science(all)
Physics and Astronomy(all)

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10.1016/j.cap.2011.06.009

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title = "Low-resistance Cr/Al Ohmic contacts to N-polar n-type GaN for high-performance vertical light-emitting diodes",

abstract = "We investigated the electrical properties of Cr(30 nm)/Al(200 nm) contacts to N-polar n-type GaN for high-performance vertical light-emitting diodes and compare them with those of Ti(30 nm)/Al(200 nm) contacts. Before annealing, both the samples show ohmic behaviors with a contact resistivity of 1.9-2.3 × 10-4 Ωcm2. Upon annealing at 250 °C for 1 min in N2 ambient, the Ti/Al contacts become non-ohmic, while the Cr/Al contacts remain ohmic with a contact resistivity of 1.4 × 10-3 Ωcm2. Based on X-ray photoemission spectroscopy and secondary ion mass spectrometry results, ohmic formation and degradation mechanisms are briefly described and discussed.",

keywords = "Cr/Al, N-polar n-type GaN, Ohmic contact, Vertical light-emitting diode",

author = "Jeon, {Joon Woo} and Lee, {Sang Youl} and Song, {June O.} and Seong, {Tae Yeon}",

note = "Funding Information: This work was supported by the Korea Research Foundation Grant funded by the Korean Government ( KRF-2008-313-D00593 ), the Manpower Development Program for Energy & Resources of the Ministry of Knowledge and Economy (Grant no. 2008-E-AP-HM-P-16-0000 ), and the World Class University program through the National Research Foundation of Korea funded by the MEST ( R33-2008-000-10025-0 ). Copyright: Copyright 2011 Elsevier B.V., All rights reserved.",

year = "2012",

month = jan,

doi = "10.1016/j.cap.2011.06.009",

language = "English",

volume = "12",

pages = "225--227",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier",

number = "1",

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TY - JOUR

T1 - Low-resistance Cr/Al Ohmic contacts to N-polar n-type GaN for high-performance vertical light-emitting diodes

AU - Jeon, Joon Woo

AU - Lee, Sang Youl

AU - Song, June O.

AU - Seong, Tae Yeon

N1 - Funding Information: This work was supported by the Korea Research Foundation Grant funded by the Korean Government ( KRF-2008-313-D00593 ), the Manpower Development Program for Energy & Resources of the Ministry of Knowledge and Economy (Grant no. 2008-E-AP-HM-P-16-0000 ), and the World Class University program through the National Research Foundation of Korea funded by the MEST ( R33-2008-000-10025-0 ). Copyright: Copyright 2011 Elsevier B.V., All rights reserved.

PY - 2012/1

Y1 - 2012/1

N2 - We investigated the electrical properties of Cr(30 nm)/Al(200 nm) contacts to N-polar n-type GaN for high-performance vertical light-emitting diodes and compare them with those of Ti(30 nm)/Al(200 nm) contacts. Before annealing, both the samples show ohmic behaviors with a contact resistivity of 1.9-2.3 × 10-4 Ωcm2. Upon annealing at 250 °C for 1 min in N2 ambient, the Ti/Al contacts become non-ohmic, while the Cr/Al contacts remain ohmic with a contact resistivity of 1.4 × 10-3 Ωcm2. Based on X-ray photoemission spectroscopy and secondary ion mass spectrometry results, ohmic formation and degradation mechanisms are briefly described and discussed.

AB - We investigated the electrical properties of Cr(30 nm)/Al(200 nm) contacts to N-polar n-type GaN for high-performance vertical light-emitting diodes and compare them with those of Ti(30 nm)/Al(200 nm) contacts. Before annealing, both the samples show ohmic behaviors with a contact resistivity of 1.9-2.3 × 10-4 Ωcm2. Upon annealing at 250 °C for 1 min in N2 ambient, the Ti/Al contacts become non-ohmic, while the Cr/Al contacts remain ohmic with a contact resistivity of 1.4 × 10-3 Ωcm2. Based on X-ray photoemission spectroscopy and secondary ion mass spectrometry results, ohmic formation and degradation mechanisms are briefly described and discussed.

KW - Cr/Al

KW - N-polar n-type GaN

KW - Ohmic contact

KW - Vertical light-emitting diode

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JO - Current Applied Physics

JF - Current Applied Physics

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Low-resistance Cr/Al Ohmic contacts to N-polar n-type GaN for high-performance vertical light-emitting diodes

Abstract

Keywords

ASJC Scopus subject areas

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