Low resistance CrB2/Ti/Al ohmic contacts to N-face n-GaN for high power GaN-based vertical light emitting diodes

Seong Han Park; Joon Woo Jeon; Sang Youl Lee; Jihyung Moon; June O. Song; Tae Yeon Seong

doi:10.1149/1.3461136

Low resistance CrB₂/Ti/Al ohmic contacts to N-face n-GaN for high power GaN-based vertical light emitting diodes

Seong Han Park^*
, Joon Woo Jeon
, Sang Youl Lee
, Jihyung Moon
, June O. Song
, Tae Yeon Seong

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We investigated the effect of a CrB₂ interlayer on the electrical properties of Ti/Al contacts to N-face n-type GaN for high performance vertical light emitting diodes. Before annealing, both CrB ₂ (30 nm) /Ti (30 nm) /Al (200 nm) and Ti (30 nm)/Al (200 nm) contacts produce ohmic behaviors with a contact resistivity of 1.92 × 10^-4 and 1.99 × 10^-4 Ω cm², respectively. Unlike the Ti/Al contacts, however, the CrB₂ /Ti/Al contacts remain ohmic with a contact resistivity of 8.30 × 10^-4 cm² even after annealing at 250°C for 1 min in N₂ ambient. X-ray photoemission spectroscopy and secondary-ion mass spectrometry examinations are performed to describe the ohmic formation behavior.

Original language	English
Pages (from-to)	H333-H335
Journal	Electrochemical and Solid-State Letters
Volume	13
Issue number	10
DOIs	https://doi.org/10.1149/1.3461136
Publication status	Published - 2010

ASJC Scopus subject areas

General Chemical Engineering
General Materials Science
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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@article{c25b222ed96e4cbfbb45747bd976f5be,

title = "Low resistance CrB2/Ti/Al ohmic contacts to N-face n-GaN for high power GaN-based vertical light emitting diodes",

abstract = "We investigated the effect of a CrB2 interlayer on the electrical properties of Ti/Al contacts to N-face n-type GaN for high performance vertical light emitting diodes. Before annealing, both CrB 2 (30 nm) /Ti (30 nm) /Al (200 nm) and Ti (30 nm)/Al (200 nm) contacts produce ohmic behaviors with a contact resistivity of 1.92 × 10-4 and 1.99 × 10-4 Ω cm2, respectively. Unlike the Ti/Al contacts, however, the CrB2 /Ti/Al contacts remain ohmic with a contact resistivity of 8.30 × 10-4 cm2 even after annealing at 250°C for 1 min in N2 ambient. X-ray photoemission spectroscopy and secondary-ion mass spectrometry examinations are performed to describe the ohmic formation behavior.",

author = "Park, \{Seong Han\} and Jeon, \{Joon Woo\} and Lee, \{Sang Youl\} and Jihyung Moon and Song, \{June O.\} and Seong, \{Tae Yeon\}",

year = "2010",

doi = "10.1149/1.3461136",

language = "English",

volume = "13",

pages = "H333--H335",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society Inc.",

number = "10",

}

TY - JOUR

T1 - Low resistance CrB2/Ti/Al ohmic contacts to N-face n-GaN for high power GaN-based vertical light emitting diodes

AU - Park, Seong Han

AU - Jeon, Joon Woo

AU - Lee, Sang Youl

AU - Moon, Jihyung

AU - Song, June O.

AU - Seong, Tae Yeon

PY - 2010

Y1 - 2010

N2 - We investigated the effect of a CrB2 interlayer on the electrical properties of Ti/Al contacts to N-face n-type GaN for high performance vertical light emitting diodes. Before annealing, both CrB 2 (30 nm) /Ti (30 nm) /Al (200 nm) and Ti (30 nm)/Al (200 nm) contacts produce ohmic behaviors with a contact resistivity of 1.92 × 10-4 and 1.99 × 10-4 Ω cm2, respectively. Unlike the Ti/Al contacts, however, the CrB2 /Ti/Al contacts remain ohmic with a contact resistivity of 8.30 × 10-4 cm2 even after annealing at 250°C for 1 min in N2 ambient. X-ray photoemission spectroscopy and secondary-ion mass spectrometry examinations are performed to describe the ohmic formation behavior.

AB - We investigated the effect of a CrB2 interlayer on the electrical properties of Ti/Al contacts to N-face n-type GaN for high performance vertical light emitting diodes. Before annealing, both CrB 2 (30 nm) /Ti (30 nm) /Al (200 nm) and Ti (30 nm)/Al (200 nm) contacts produce ohmic behaviors with a contact resistivity of 1.92 × 10-4 and 1.99 × 10-4 Ω cm2, respectively. Unlike the Ti/Al contacts, however, the CrB2 /Ti/Al contacts remain ohmic with a contact resistivity of 8.30 × 10-4 cm2 even after annealing at 250°C for 1 min in N2 ambient. X-ray photoemission spectroscopy and secondary-ion mass spectrometry examinations are performed to describe the ohmic formation behavior.

UR - https://www.scopus.com/pages/publications/77955723726

U2 - 10.1149/1.3461136

DO - 10.1149/1.3461136

M3 - Article

AN - SCOPUS:77955723726

SN - 1099-0062

VL - 13

SP - H333-H335

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 10

ER -

Low resistance CrB₂/Ti/Al ohmic contacts to N-face n-GaN for high power GaN-based vertical light emitting diodes

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