Low resistance high reflectance ITO/Al ohmic contacts to p-Type GaN via SF6 plasma treatments

Wan Ho Lee; Dong Ho Kim; Dong Ju Chae; Ji Won Yang; Jae In Sim; Yun Mo Sung; Tae Geun Kim

doi:10.1149/1.3290733

Low resistance high reflectance ITO/Al ohmic contacts to p-Type GaN via SF6 plasma treatments

Wan Ho Lee, Dong Ho Kim, Dong Ju Chae, Ji Won Yang, Jae In Sim, Yun Mo Sung, Tae Geun Kim

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

We demonstrate improved electrical and optical properties of indium tin oxide (ITO)/Al reflectors, via SF₆ plasma treatments, for vertical-type GaN light emitting diodes. A 200 nm thick ITO film was deposited and annealed at 650°C to obtain ohmic contacts with p-GaN, after which SF₆ and O₂ plasma were applied on ITO before the Al deposition to effectively increase the work function of ITO and decrease the roughness of the ITO surface. The SF6 plasma-treated ITO/Al reflector showed the lowest specific contact resistance of 9.83× 10^-4 ω cm² and the highest reflectance of 91% at 460 nm, compared to as-deposited and O₂ plasma-treated ITO/Al reflectors.

Original language	English
Pages (from-to)	H98-H100
Journal	Electrochemical and Solid-State Letters
Volume	13
Issue number	4
DOIs	https://doi.org/10.1149/1.3290733
Publication status	Published - 2010

ASJC Scopus subject areas

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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title = "Low resistance high reflectance ITO/Al ohmic contacts to p-Type GaN via SF6 plasma treatments",

abstract = "We demonstrate improved electrical and optical properties of indium tin oxide (ITO)/Al reflectors, via SF6 plasma treatments, for vertical-type GaN light emitting diodes. A 200 nm thick ITO film was deposited and annealed at 650°C to obtain ohmic contacts with p-GaN, after which SF6 and O2 plasma were applied on ITO before the Al deposition to effectively increase the work function of ITO and decrease the roughness of the ITO surface. The SF6 plasma-treated ITO/Al reflector showed the lowest specific contact resistance of 9.83× 10-4 ω cm2 and the highest reflectance of 91% at 460 nm, compared to as-deposited and O2 plasma-treated ITO/Al reflectors.",

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volume = "13",

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T1 - Low resistance high reflectance ITO/Al ohmic contacts to p-Type GaN via SF6 plasma treatments

AU - Lee, Wan Ho

AU - Kim, Dong Ho

AU - Chae, Dong Ju

AU - Yang, Ji Won

AU - Sim, Jae In

AU - Sung, Yun Mo

AU - Kim, Tae Geun

PY - 2010

Y1 - 2010

N2 - We demonstrate improved electrical and optical properties of indium tin oxide (ITO)/Al reflectors, via SF6 plasma treatments, for vertical-type GaN light emitting diodes. A 200 nm thick ITO film was deposited and annealed at 650°C to obtain ohmic contacts with p-GaN, after which SF6 and O2 plasma were applied on ITO before the Al deposition to effectively increase the work function of ITO and decrease the roughness of the ITO surface. The SF6 plasma-treated ITO/Al reflector showed the lowest specific contact resistance of 9.83× 10-4 ω cm2 and the highest reflectance of 91% at 460 nm, compared to as-deposited and O2 plasma-treated ITO/Al reflectors.

AB - We demonstrate improved electrical and optical properties of indium tin oxide (ITO)/Al reflectors, via SF6 plasma treatments, for vertical-type GaN light emitting diodes. A 200 nm thick ITO film was deposited and annealed at 650°C to obtain ohmic contacts with p-GaN, after which SF6 and O2 plasma were applied on ITO before the Al deposition to effectively increase the work function of ITO and decrease the roughness of the ITO surface. The SF6 plasma-treated ITO/Al reflector showed the lowest specific contact resistance of 9.83× 10-4 ω cm2 and the highest reflectance of 91% at 460 nm, compared to as-deposited and O2 plasma-treated ITO/Al reflectors.

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SN - 1099-0062

VL - 13

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JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

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ER -

Low resistance high reflectance ITO/Al ohmic contacts to p-Type GaN via SF6 plasma treatments

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