Low-resistance Pt/Pd/Au ohmic contacts to p-type AlGaN

Han Ki Kim, Tae Yeon Seong, Ilesanmi Adesida, Chak Wah Tang, Kei May Lau

Research output: Contribution to journalArticlepeer-review

31 Citations (Scopus)


A Pt/Pd/Au metallization scheme for producing low-resistance ohmic contacts to moderately doped p-AlGaN:Mg was analyzed. The annealed Pt/Pd/Au contact exhibited linear current-voltage characteristics. It was shown that the Pt/Pd/Au contact exhibited a specific contact resistivity of 3.1×10 -4 ω cm2 when annealed at 600 °C for 1 min in a flowing N2 atmosphere. A preliminary explanation for ohmic contact formation was described using Auger electron spectroscopy and x-ray photoelectron spectroscopy.

Original languageEnglish
Pages (from-to)1710-1712
Number of pages3
JournalApplied Physics Letters
Issue number10
Publication statusPublished - 2004 Mar 8
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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