Low-resistance Ti/Au ohmic contacts to Al-doped ZnO layers

Han Ki Kim; Sang Heon Han; Tae Yeon Seong; Won Kook Choi

doi:10.1063/1.1308527

Low-resistance Ti/Au ohmic contacts to Al-doped ZnO layers

Han Ki Kim, Sang Heon Han, Tae Yeon Seong, Won Kook Choi

Research output: Contribution to journal › Article › peer-review

126 Citations (Scopus)

Abstract

We report on low-resistance ohmic contacts to the moderately doped n-type ZnO:Al(n_d=2 × 10¹⁷ cm^-3) obtained using Ti (30 nm)/Au (50 nm) metallization schemes. Annealed Ti/Au contacts exhibit linear current-voltage characteristics, showing that high-quality ohmic contacts are formed, The Ti/Au scheme produces a specific contact resistance of 2 × 10^-4 Ω cm² when annealed at 300°C for 1 min in a N₂ atmosphere.

Original language	English
Pages (from-to)	1647-1649
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	11
DOIs	https://doi.org/10.1063/1.1308527
Publication status	Published - 2000 Sept 11
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1308527

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abstract = "We report on low-resistance ohmic contacts to the moderately doped n-type ZnO:Al(nd=2 × 1017 cm-3) obtained using Ti (30 nm)/Au (50 nm) metallization schemes. Annealed Ti/Au contacts exhibit linear current-voltage characteristics, showing that high-quality ohmic contacts are formed, The Ti/Au scheme produces a specific contact resistance of 2 × 10-4 Ω cm2 when annealed at 300°C for 1 min in a N2 atmosphere.",

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AU - Seong, Tae Yeon

AU - Choi, Won Kook

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Y1 - 2000/9/11

N2 - We report on low-resistance ohmic contacts to the moderately doped n-type ZnO:Al(nd=2 × 1017 cm-3) obtained using Ti (30 nm)/Au (50 nm) metallization schemes. Annealed Ti/Au contacts exhibit linear current-voltage characteristics, showing that high-quality ohmic contacts are formed, The Ti/Au scheme produces a specific contact resistance of 2 × 10-4 Ω cm2 when annealed at 300°C for 1 min in a N2 atmosphere.

AB - We report on low-resistance ohmic contacts to the moderately doped n-type ZnO:Al(nd=2 × 1017 cm-3) obtained using Ti (30 nm)/Au (50 nm) metallization schemes. Annealed Ti/Au contacts exhibit linear current-voltage characteristics, showing that high-quality ohmic contacts are formed, The Ti/Au scheme produces a specific contact resistance of 2 × 10-4 Ω cm2 when annealed at 300°C for 1 min in a N2 atmosphere.

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Low-resistance Ti/Au ohmic contacts to Al-doped ZnO layers

Abstract

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