Low-resistance Ti/Au ohmic contacts to Al-doped ZnO layers

Han Ki Kim, Sang Heon Han, Tae Yeon Seong, Won Kook Choi

Research output: Contribution to journalArticlepeer-review

126 Citations (Scopus)


We report on low-resistance ohmic contacts to the moderately doped n-type ZnO:Al(nd=2 × 1017 cm-3) obtained using Ti (30 nm)/Au (50 nm) metallization schemes. Annealed Ti/Au contacts exhibit linear current-voltage characteristics, showing that high-quality ohmic contacts are formed, The Ti/Au scheme produces a specific contact resistance of 2 × 10-4 Ω cm2 when annealed at 300°C for 1 min in a N2 atmosphere.

Original languageEnglish
Pages (from-to)1647-1649
Number of pages3
JournalApplied Physics Letters
Issue number11
Publication statusPublished - 2000 Sept 11
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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