TY - JOUR
T1 - Low-Resistivity Cobalt and Ruthenium Ultra-Thin Film Deposition Using Bipolar HiPIMS Technique
AU - Seo, Min
AU - Cho, Min Kyung
AU - Kang, Un Hyeon
AU - Jeon, Sin Young
AU - Lim, Sang Ho
AU - Han, Seung Hee
N1 - Funding Information:
This research was supported by the “Development of ultra-high efficiency solar cell technology (Code No. 2E31231)” programs of the Korea Institute of Science and Technology, Republic of Korea.
Publisher Copyright:
© 2022 The Electrochemical Society ("ECS").
PY - 2022/3
Y1 - 2022/3
N2 - Owing to the rapid growth of very large-scale integration technology at nanometer scales, cobalt and ruthenium interconnects are being used to solve the high-resistivity copper problem. However, with such interconnects, carbon contamination can occur during chemical vapor deposition and atomic layer deposition. Bipolar (BP) high-power impulse magnetron sputtering (HiPIMS) with a high ionization rate is an excellent vacuum process for depositing low-resistivity thin films. In this study, low-resistivity cobalt, ruthenium, and copper thin films were deposited using BP-HiPIMS, HiPIMS, and direct-current magnetron sputtering (DCMS). The resistivities of the cobalt, ruthenium, and copper thin films (<10 nm) deposited via BP-HiPIMS were 91.5, 75, and 35%, respectively, lower than the resistivities of the same film materials deposited using direct-current MS. To solve the low passthrough flux of cobalt, the target temperature was raised to the Curie temperature (approximately 1100 °C) using a thermal insulation backplate (Ti-6Al-4V), resulting in a resistivity reduction of about 73%. The study provides a novel method for the vacuum deposition of cobalt and ruthenium thin films.
AB - Owing to the rapid growth of very large-scale integration technology at nanometer scales, cobalt and ruthenium interconnects are being used to solve the high-resistivity copper problem. However, with such interconnects, carbon contamination can occur during chemical vapor deposition and atomic layer deposition. Bipolar (BP) high-power impulse magnetron sputtering (HiPIMS) with a high ionization rate is an excellent vacuum process for depositing low-resistivity thin films. In this study, low-resistivity cobalt, ruthenium, and copper thin films were deposited using BP-HiPIMS, HiPIMS, and direct-current magnetron sputtering (DCMS). The resistivities of the cobalt, ruthenium, and copper thin films (<10 nm) deposited via BP-HiPIMS were 91.5, 75, and 35%, respectively, lower than the resistivities of the same film materials deposited using direct-current MS. To solve the low passthrough flux of cobalt, the target temperature was raised to the Curie temperature (approximately 1100 °C) using a thermal insulation backplate (Ti-6Al-4V), resulting in a resistivity reduction of about 73%. The study provides a novel method for the vacuum deposition of cobalt and ruthenium thin films.
UR - http://www.scopus.com/inward/record.url?scp=85126466693&partnerID=8YFLogxK
U2 - 10.1149/2162-8777/ac5805
DO - 10.1149/2162-8777/ac5805
M3 - Article
AN - SCOPUS:85126466693
SN - 2162-8769
VL - 11
JO - ECS Journal of Solid State Science and Technology
JF - ECS Journal of Solid State Science and Technology
IS - 3
M1 - 033006
ER -