Low temperature boron activation in amorphous germanium for three dimensional integrated circuits (3D-ICs) using Ni-induced crystallization

Jin Hong Park; M. Tada; H. Y. Yu; D. Kuzum; Y. Na; K. C. Saraswat

doi:10.1149/1.2986852

Low temperature boron activation in amorphous germanium for three dimensional integrated circuits (3D-ICs) using Ni-induced crystallization

Jin Hong Park, M. Tada, H. Y. Yu, D. Kuzum, Y. Na, K. C. Saraswat

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this work, we present very low temperature boron activation technique in amorphous (α)-Ge using Ni-induced crystallization. Ni not only successfully crystallize α-Ge film, it also facilitates activation of the respective boron atoms in the α-Ge during the crystallization process at temperatures as low as 360°C. The feasibility of the low temperature activation technique has successfully been demonstrated for a Ge gate electrode in a Si PMOSFET using Schottky Ni silicide source/drain.

Original language	English
Title of host publication	ECS Transactions - SiGe, Ge, and Related Compounds 3
Subtitle of host publication	Materials, Processing, and Devices
Publisher	Electrochemical Society Inc.
Pages	909-916
Number of pages	8
Edition	10
ISBN (Print)	9781566776561
DOIs	https://doi.org/10.1149/1.2986852
Publication status	Published - 2009
Externally published	Yes
Event	3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting - Honolulu, HI, United States Duration: 2008 Oct 12 → 2008 Oct 17

Publication series

Name	ECS Transactions
Number	10
Volume	16
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting
Country/Territory	United States
City	Honolulu, HI
Period	08/10/12 → 08/10/17

ASJC Scopus subject areas

Engineering(all)

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10.1149/1.2986852

Cite this

Park, J. H., Tada, M., Yu, H. Y., Kuzum, D., Na, Y., & Saraswat, K. C. (2009). Low temperature boron activation in amorphous germanium for three dimensional integrated circuits (3D-ICs) using Ni-induced crystallization. In ECS Transactions - SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices (10 ed., pp. 909-916). (ECS Transactions; Vol. 16, No. 10). Electrochemical Society Inc.. https://doi.org/10.1149/1.2986852

Low temperature boron activation in amorphous germanium for three dimensional integrated circuits (3D-ICs) using Ni-induced crystallization. / Park, Jin Hong; Tada, M.; Yu, H. Y. et al.
ECS Transactions - SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices. 10. ed. Electrochemical Society Inc., 2009. p. 909-916 (ECS Transactions; Vol. 16, No. 10).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Park, JH, Tada, M, Yu, HY, Kuzum, D, Na, Y & Saraswat, KC 2009, Low temperature boron activation in amorphous germanium for three dimensional integrated circuits (3D-ICs) using Ni-induced crystallization. in ECS Transactions - SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices. 10 edn, ECS Transactions, no. 10, vol. 16, Electrochemical Society Inc., pp. 909-916, 3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting, Honolulu, HI, United States, 08/10/12. https://doi.org/10.1149/1.2986852

Park JH, Tada M, Yu HY, Kuzum D, Na Y, Saraswat KC. Low temperature boron activation in amorphous germanium for three dimensional integrated circuits (3D-ICs) using Ni-induced crystallization. In ECS Transactions - SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices. 10 ed. Electrochemical Society Inc. 2009. p. 909-916. (ECS Transactions; 10). doi: 10.1149/1.2986852

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title = "Low temperature boron activation in amorphous germanium for three dimensional integrated circuits (3D-ICs) using Ni-induced crystallization",

abstract = "In this work, we present very low temperature boron activation technique in amorphous (α)-Ge using Ni-induced crystallization. Ni not only successfully crystallize α-Ge film, it also facilitates activation of the respective boron atoms in the α-Ge during the crystallization process at temperatures as low as 360°C. The feasibility of the low temperature activation technique has successfully been demonstrated for a Ge gate electrode in a Si PMOSFET using Schottky Ni silicide source/drain.",

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AU - Kuzum, D.

AU - Na, Y.

AU - Saraswat, K. C.

PY - 2009

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AB - In this work, we present very low temperature boron activation technique in amorphous (α)-Ge using Ni-induced crystallization. Ni not only successfully crystallize α-Ge film, it also facilitates activation of the respective boron atoms in the α-Ge during the crystallization process at temperatures as low as 360°C. The feasibility of the low temperature activation technique has successfully been demonstrated for a Ge gate electrode in a Si PMOSFET using Schottky Ni silicide source/drain.

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M3 - Conference contribution

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BT - ECS Transactions - SiGe, Ge, and Related Compounds 3

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Y2 - 12 October 2008 through 17 October 2008

ER -

Low temperature boron activation in amorphous germanium for three dimensional integrated circuits (3D-ICs) using Ni-induced crystallization

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