Low-temperature crystallization and electrical properties of BST thin films using excimer laser annealing

Min Gyu Kang; Kwang Hwan Cho; Seung Min Oh; Young Ho Do; Chong Yun Kang; Sangsig Kim; Seok Jin Yoon

doi:10.1016/j.cap.2010.12.029

Low-temperature crystallization and electrical properties of BST thin films using excimer laser annealing

Min Gyu Kang, Kwang Hwan Cho, Seung Min Oh, Young Ho Do, Chong Yun Kang, Sangsig Kim, Seok Jin Yoon

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

(Ba,Sr)TiO₃ (BST) thin film with a perovskite structure has a potential for the practical applications in various functional devices. Normally, the BST thin films derived from sol-gel and sputtering are amorphous or partially crystalline when processed below 700 °C. For the purpose of integrating BST thin film directly into system-on-package (SoP), it is necessary to process the BST film below 350 °C. The electrical properties of low-temperature crystallized BST film were studied in this paper. The BST thin films have been crystallized at 300 °C by excimer laser annealing (ELA). The BST films were exhibited in a single perovskite phase and have well-defined electrical properties such as high dielectric constant, low dielectric loss and low leakage current density. As a result, we demonstrated crystallized BST thin film which has permittivity of 143, dielectric loss of 0.028 and leakage current density of 0.9 μA/cm² below 300 °C.

Original language	English
Pages (from-to)	S66-S69
Journal	Current Applied Physics
Volume	11
Issue number	3 SUPPL.
DOIs	https://doi.org/10.1016/j.cap.2010.12.029
Publication status	Published - 2011 May

Keywords

BST
Embedded capacitor
Excimer laser annealing
Sol-gel
System-on-package
Thin film

ASJC Scopus subject areas

Materials Science(all)
Physics and Astronomy(all)

Access to Document

10.1016/j.cap.2010.12.029

Cite this

@article{7c22b9b9bf444e6a95f42cc2517c1bef,

title = "Low-temperature crystallization and electrical properties of BST thin films using excimer laser annealing",

abstract = "(Ba,Sr)TiO3 (BST) thin film with a perovskite structure has a potential for the practical applications in various functional devices. Normally, the BST thin films derived from sol-gel and sputtering are amorphous or partially crystalline when processed below 700 °C. For the purpose of integrating BST thin film directly into system-on-package (SoP), it is necessary to process the BST film below 350 °C. The electrical properties of low-temperature crystallized BST film were studied in this paper. The BST thin films have been crystallized at 300 °C by excimer laser annealing (ELA). The BST films were exhibited in a single perovskite phase and have well-defined electrical properties such as high dielectric constant, low dielectric loss and low leakage current density. As a result, we demonstrated crystallized BST thin film which has permittivity of 143, dielectric loss of 0.028 and leakage current density of 0.9 μA/cm2 below 300 °C.",

keywords = "BST, Embedded capacitor, Excimer laser annealing, Sol-gel, System-on-package, Thin film",

author = "Kang, {Min Gyu} and Cho, {Kwang Hwan} and Oh, {Seung Min} and Do, {Young Ho} and Kang, {Chong Yun} and Sangsig Kim and Yoon, {Seok Jin}",

note = "Funding Information: This work was supported in part by a grant from Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy . Copyright: Copyright 2011 Elsevier B.V., All rights reserved.",

year = "2011",

month = may,

doi = "10.1016/j.cap.2010.12.029",

language = "English",

volume = "11",

pages = "S66--S69",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier",

number = "3 SUPPL.",

}

TY - JOUR

T1 - Low-temperature crystallization and electrical properties of BST thin films using excimer laser annealing

AU - Kang, Min Gyu

AU - Cho, Kwang Hwan

AU - Oh, Seung Min

AU - Do, Young Ho

AU - Kang, Chong Yun

AU - Kim, Sangsig

AU - Yoon, Seok Jin

N1 - Funding Information: This work was supported in part by a grant from Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy . Copyright: Copyright 2011 Elsevier B.V., All rights reserved.

PY - 2011/5

Y1 - 2011/5

N2 - (Ba,Sr)TiO3 (BST) thin film with a perovskite structure has a potential for the practical applications in various functional devices. Normally, the BST thin films derived from sol-gel and sputtering are amorphous or partially crystalline when processed below 700 °C. For the purpose of integrating BST thin film directly into system-on-package (SoP), it is necessary to process the BST film below 350 °C. The electrical properties of low-temperature crystallized BST film were studied in this paper. The BST thin films have been crystallized at 300 °C by excimer laser annealing (ELA). The BST films were exhibited in a single perovskite phase and have well-defined electrical properties such as high dielectric constant, low dielectric loss and low leakage current density. As a result, we demonstrated crystallized BST thin film which has permittivity of 143, dielectric loss of 0.028 and leakage current density of 0.9 μA/cm2 below 300 °C.

AB - (Ba,Sr)TiO3 (BST) thin film with a perovskite structure has a potential for the practical applications in various functional devices. Normally, the BST thin films derived from sol-gel and sputtering are amorphous or partially crystalline when processed below 700 °C. For the purpose of integrating BST thin film directly into system-on-package (SoP), it is necessary to process the BST film below 350 °C. The electrical properties of low-temperature crystallized BST film were studied in this paper. The BST thin films have been crystallized at 300 °C by excimer laser annealing (ELA). The BST films were exhibited in a single perovskite phase and have well-defined electrical properties such as high dielectric constant, low dielectric loss and low leakage current density. As a result, we demonstrated crystallized BST thin film which has permittivity of 143, dielectric loss of 0.028 and leakage current density of 0.9 μA/cm2 below 300 °C.

KW - BST

KW - Embedded capacitor

KW - Excimer laser annealing

KW - Sol-gel

KW - System-on-package

KW - Thin film

UR - http://www.scopus.com/inward/record.url?scp=80255132080&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80255132080&partnerID=8YFLogxK

U2 - 10.1016/j.cap.2010.12.029

DO - 10.1016/j.cap.2010.12.029

M3 - Article

AN - SCOPUS:80255132080

SN - 1567-1739

VL - 11

SP - S66-S69

JO - Current Applied Physics

JF - Current Applied Physics

IS - 3 SUPPL.

ER -

Low-temperature crystallization and electrical properties of BST thin films using excimer laser annealing

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this