Low-temperature crystallization and electrical properties of BST thin films using excimer laser annealing

Min Gyu Kang; Kwang Hwan Cho; Seung Min Oh; Young Ho Do; Chong Yun Kang; Sangsig Kim; Seok Jin Yoon

doi:10.1016/j.cap.2010.12.029

Low-temperature crystallization and electrical properties of BST thin films using excimer laser annealing

Min Gyu Kang
, Kwang Hwan Cho
, Seung Min Oh
, Young Ho Do
, Chong Yun Kang^*
, Sangsig Kim
, Seok Jin Yoon

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

(Ba,Sr)TiO₃ (BST) thin film with a perovskite structure has a potential for the practical applications in various functional devices. Normally, the BST thin films derived from sol-gel and sputtering are amorphous or partially crystalline when processed below 700 °C. For the purpose of integrating BST thin film directly into system-on-package (SoP), it is necessary to process the BST film below 350 °C. The electrical properties of low-temperature crystallized BST film were studied in this paper. The BST thin films have been crystallized at 300 °C by excimer laser annealing (ELA). The BST films were exhibited in a single perovskite phase and have well-defined electrical properties such as high dielectric constant, low dielectric loss and low leakage current density. As a result, we demonstrated crystallized BST thin film which has permittivity of 143, dielectric loss of 0.028 and leakage current density of 0.9 μA/cm² below 300 °C.

Original language	English
Pages (from-to)	S66-S69
Journal	Current Applied Physics
Volume	11
Issue number	3 SUPPL.
DOIs	https://doi.org/10.1016/j.cap.2010.12.029
Publication status	Published - 2011 May

Bibliographical note

Funding Information:
This work was supported in part by a grant from Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy .

Copyright:
Copyright 2011 Elsevier B.V., All rights reserved.

Keywords

BST
Embedded capacitor
Excimer laser annealing
Sol-gel
System-on-package
Thin film

ASJC Scopus subject areas

General Materials Science
General Physics and Astronomy

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10.1016/j.cap.2010.12.029

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@article{7c22b9b9bf444e6a95f42cc2517c1bef,

title = "Low-temperature crystallization and electrical properties of BST thin films using excimer laser annealing",

abstract = "(Ba,Sr)TiO3 (BST) thin film with a perovskite structure has a potential for the practical applications in various functional devices. Normally, the BST thin films derived from sol-gel and sputtering are amorphous or partially crystalline when processed below 700 °C. For the purpose of integrating BST thin film directly into system-on-package (SoP), it is necessary to process the BST film below 350 °C. The electrical properties of low-temperature crystallized BST film were studied in this paper. The BST thin films have been crystallized at 300 °C by excimer laser annealing (ELA). The BST films were exhibited in a single perovskite phase and have well-defined electrical properties such as high dielectric constant, low dielectric loss and low leakage current density. As a result, we demonstrated crystallized BST thin film which has permittivity of 143, dielectric loss of 0.028 and leakage current density of 0.9 μA/cm2 below 300 °C.",

keywords = "BST, Embedded capacitor, Excimer laser annealing, Sol-gel, System-on-package, Thin film",

author = "Kang, \{Min Gyu\} and Cho, \{Kwang Hwan\} and Oh, \{Seung Min\} and Do, \{Young Ho\} and Kang, \{Chong Yun\} and Sangsig Kim and Yoon, \{Seok Jin\}",

note = "Funding Information: This work was supported in part by a grant from Fundamental R\&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy . Copyright: Copyright 2011 Elsevier B.V., All rights reserved.",

year = "2011",

month = may,

doi = "10.1016/j.cap.2010.12.029",

language = "English",

volume = "11",

pages = "S66--S69",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier B.V.",

number = "3 SUPPL.",

}

TY - JOUR

T1 - Low-temperature crystallization and electrical properties of BST thin films using excimer laser annealing

AU - Kang, Min Gyu

AU - Cho, Kwang Hwan

AU - Oh, Seung Min

AU - Do, Young Ho

AU - Kang, Chong Yun

AU - Kim, Sangsig

AU - Yoon, Seok Jin

N1 - Funding Information: This work was supported in part by a grant from Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy . Copyright: Copyright 2011 Elsevier B.V., All rights reserved.

PY - 2011/5

Y1 - 2011/5

N2 - (Ba,Sr)TiO3 (BST) thin film with a perovskite structure has a potential for the practical applications in various functional devices. Normally, the BST thin films derived from sol-gel and sputtering are amorphous or partially crystalline when processed below 700 °C. For the purpose of integrating BST thin film directly into system-on-package (SoP), it is necessary to process the BST film below 350 °C. The electrical properties of low-temperature crystallized BST film were studied in this paper. The BST thin films have been crystallized at 300 °C by excimer laser annealing (ELA). The BST films were exhibited in a single perovskite phase and have well-defined electrical properties such as high dielectric constant, low dielectric loss and low leakage current density. As a result, we demonstrated crystallized BST thin film which has permittivity of 143, dielectric loss of 0.028 and leakage current density of 0.9 μA/cm2 below 300 °C.

AB - (Ba,Sr)TiO3 (BST) thin film with a perovskite structure has a potential for the practical applications in various functional devices. Normally, the BST thin films derived from sol-gel and sputtering are amorphous or partially crystalline when processed below 700 °C. For the purpose of integrating BST thin film directly into system-on-package (SoP), it is necessary to process the BST film below 350 °C. The electrical properties of low-temperature crystallized BST film were studied in this paper. The BST thin films have been crystallized at 300 °C by excimer laser annealing (ELA). The BST films were exhibited in a single perovskite phase and have well-defined electrical properties such as high dielectric constant, low dielectric loss and low leakage current density. As a result, we demonstrated crystallized BST thin film which has permittivity of 143, dielectric loss of 0.028 and leakage current density of 0.9 μA/cm2 below 300 °C.

KW - BST

KW - Embedded capacitor

KW - Excimer laser annealing

KW - Sol-gel

KW - System-on-package

KW - Thin film

UR - https://www.scopus.com/pages/publications/80255132080

U2 - 10.1016/j.cap.2010.12.029

DO - 10.1016/j.cap.2010.12.029

M3 - Article

AN - SCOPUS:80255132080

SN - 1567-1739

VL - 11

SP - S66-S69

JO - Current Applied Physics

JF - Current Applied Physics

IS - 3 SUPPL.

ER -

Low-temperature crystallization and electrical properties of BST thin films using excimer laser annealing

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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