Low temperature deposition of ITO thin films by ion beam sputtering

Donghwan Kim, Younggun Han, Jun Sik Cho, Seok Keun Koh

Research output: Contribution to journalArticlepeer-review

116 Citations (Scopus)


An ion beam sputtering system was used for the deposition of indium-tin-oxide (ITO) films at low temperatures (below 200 °C). The electrical and optical properties and the microstructure were highly dependent on the growth temperature, the oxygen partial pressure and the ion beam energy. A reasonable resistivity (3.5×10-4 Ωcm) was measured in the films deposited by Ar ion sputtering at as low as 50 °C. In the films by Ar ion sputtering, the lowest resistivity was 1.5×10-4 Ωcm at 100 °C. Oxygen addition to the sputtering gas increased the resistivity, especially at low substrate temperatures. The addition of oxygen to the sputtering gas changed the microstructure from `domain' (sub-grain) structure at 100 °C to `grain' structure. The oxygen addition induced the change in O/In ratios. The film composition also depended on the ion beam energy. The optical transmittance higher than 80% in the visible range was measured in the films deposited at above 100 °C. The optical band gap calculated from the transmittance spectra was approximately 4.2 eV.

Original languageEnglish
Pages (from-to)81-86
Number of pages6
JournalThin Solid Films
Publication statusPublished - 2000 Dec 1

Bibliographical note

Funding Information:
This work was supported by the Korea Research Foundation via project number E00503.

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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