TY - JOUR
T1 - Low-temperature electrical characterization of junctionless transistors
AU - Jeon, Dae Young
AU - Park, So Jeong
AU - Mouis, Mireille
AU - Barraud, Sylvain
AU - Kim, Gyu Tae
AU - Ghibaudo, Gérard
N1 - Funding Information:
This work was supported by European Union 7th Framework Program project SQWIRE under Grant Agreement No. 257111 and by the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology ( Converging Research Center Program , 2012K001313 and Global Frontier Research Program , No. 2011-0031638 ). The authors also thank Xavier Mescot and Martine Gri for their help in operating the cryogenic probe station system.
PY - 2013
Y1 - 2013
N2 - The electrical performance of junctionless transistors (JLTs) with planar structures was investigated under low-temperature and compared to that of the traditional inversion-mode (IM) transistors. The low-field mobility (μ0) of JLT devices was found to be limited by phonon and neutral defects scattering mechanisms for long gate lengths, whereas scattering by charged and neutral defects mostly dominated for short gate lengths, likely due to the defects induced by the source/drain (S/D) implantation added in the process. Moreover, the temperature dependence of flat-band voltage (V fb), threshold voltage (Vth) and subthreshold swing (S) of JLT devices was also discussed.
AB - The electrical performance of junctionless transistors (JLTs) with planar structures was investigated under low-temperature and compared to that of the traditional inversion-mode (IM) transistors. The low-field mobility (μ0) of JLT devices was found to be limited by phonon and neutral defects scattering mechanisms for long gate lengths, whereas scattering by charged and neutral defects mostly dominated for short gate lengths, likely due to the defects induced by the source/drain (S/D) implantation added in the process. Moreover, the temperature dependence of flat-band voltage (V fb), threshold voltage (Vth) and subthreshold swing (S) of JLT devices was also discussed.
KW - Flat-band voltage (V)
KW - Implantation induced defects
KW - Junctionless transistors (JLTs)
KW - Scattering mechanisms
KW - Threshold voltage (V)
UR - http://www.scopus.com/inward/record.url?scp=84871651510&partnerID=8YFLogxK
U2 - 10.1016/j.sse.2012.10.018
DO - 10.1016/j.sse.2012.10.018
M3 - Article
AN - SCOPUS:84871651510
SN - 0038-1101
VL - 80
SP - 135
EP - 141
JO - Solid-State Electronics
JF - Solid-State Electronics
ER -