Low-temperature fabrication of fully transparent InGaZnO thin film transistors with Ga-doped ZnO source/drain

J. H. Kim; J. W. Kim; J. H. Roh; K. J. Lee; K. M. Do; J. H. Shin; B. M. Moon; S. M. Koo

doi:10.1109/ISDRS.2011.6135362

Low-temperature fabrication of fully transparent InGaZnO thin film transistors with Ga-doped ZnO source/drain

J. H. Kim, J. W. Kim, J. H. Roh, K. J. Lee, K. M. Do, J. H. Shin, B. M. Moon, S. M. Koo

GREEN SCHOOL (Graduate School of Energy and Environment)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

During the last decades, amorphous silicon (a-Si) has been widely used for thin film transistors (TFTs). However, the need for an alternative to a-Si TFTs for next-generation display has increased. Therefore, transparent oxide semiconductor (TOS) has gathered a great amount of attention for use in active-matrix liquid-crystal displays (AM-LCDs), organic light-emitting diodes (OLEDs), and transparent flexible displays due to its good electrical properties, low temperature processing, and high transparency [1]. Among many TOSs, amorphous InGaZnO (a-IGZO) is one of the representative materials since it has a high mobility of 10 cm ²/Vs and large area uniformity [2, 3].

Original language	English
Title of host publication	2011 International Semiconductor Device Research Symposium, ISDRS 2011
DOIs	https://doi.org/10.1109/ISDRS.2011.6135362
Publication status	Published - 2011
Event	2011 International Semiconductor Device Research Symposium, ISDRS 2011 - College Park, MD, United States Duration: 2011 Dec 7 → 2011 Dec 9

Publication series

Name	2011 International Semiconductor Device Research Symposium, ISDRS 2011

Other

Other	2011 International Semiconductor Device Research Symposium, ISDRS 2011
Country/Territory	United States
City	College Park, MD
Period	11/12/7 → 11/12/9

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/ISDRS.2011.6135362

Cite this

Kim, J. H., Kim, J. W., Roh, J. H., Lee, K. J., Do, K. M., Shin, J. H., Moon, B. M., & Koo, S. M. (2011). Low-temperature fabrication of fully transparent InGaZnO thin film transistors with Ga-doped ZnO source/drain. In 2011 International Semiconductor Device Research Symposium, ISDRS 2011 Article 6135362 (2011 International Semiconductor Device Research Symposium, ISDRS 2011). https://doi.org/10.1109/ISDRS.2011.6135362

Low-temperature fabrication of fully transparent InGaZnO thin film transistors with Ga-doped ZnO source/drain. / Kim, J. H.; Kim, J. W.; Roh, J. H. et al.
2011 International Semiconductor Device Research Symposium, ISDRS 2011. 2011. 6135362 (2011 International Semiconductor Device Research Symposium, ISDRS 2011).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kim, JH, Kim, JW, Roh, JH, Lee, KJ, Do, KM, Shin, JH, Moon, BM & Koo, SM 2011, Low-temperature fabrication of fully transparent InGaZnO thin film transistors with Ga-doped ZnO source/drain. in 2011 International Semiconductor Device Research Symposium, ISDRS 2011., 6135362, 2011 International Semiconductor Device Research Symposium, ISDRS 2011, 2011 International Semiconductor Device Research Symposium, ISDRS 2011, College Park, MD, United States, 11/12/7. https://doi.org/10.1109/ISDRS.2011.6135362

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title = "Low-temperature fabrication of fully transparent InGaZnO thin film transistors with Ga-doped ZnO source/drain",

abstract = "During the last decades, amorphous silicon (a-Si) has been widely used for thin film transistors (TFTs). However, the need for an alternative to a-Si TFTs for next-generation display has increased. Therefore, transparent oxide semiconductor (TOS) has gathered a great amount of attention for use in active-matrix liquid-crystal displays (AM-LCDs), organic light-emitting diodes (OLEDs), and transparent flexible displays due to its good electrical properties, low temperature processing, and high transparency [1]. Among many TOSs, amorphous InGaZnO (a-IGZO) is one of the representative materials since it has a high mobility of 10 cm 2/Vs and large area uniformity [2, 3].",

author = "Kim, {J. H.} and Kim, {J. W.} and Roh, {J. H.} and Lee, {K. J.} and Do, {K. M.} and Shin, {J. H.} and Moon, {B. M.} and Koo, {S. M.}",

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AU - Kim, J. H.

AU - Kim, J. W.

AU - Roh, J. H.

AU - Lee, K. J.

AU - Do, K. M.

AU - Shin, J. H.

AU - Moon, B. M.

AU - Koo, S. M.

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N2 - During the last decades, amorphous silicon (a-Si) has been widely used for thin film transistors (TFTs). However, the need for an alternative to a-Si TFTs for next-generation display has increased. Therefore, transparent oxide semiconductor (TOS) has gathered a great amount of attention for use in active-matrix liquid-crystal displays (AM-LCDs), organic light-emitting diodes (OLEDs), and transparent flexible displays due to its good electrical properties, low temperature processing, and high transparency [1]. Among many TOSs, amorphous InGaZnO (a-IGZO) is one of the representative materials since it has a high mobility of 10 cm 2/Vs and large area uniformity [2, 3].

AB - During the last decades, amorphous silicon (a-Si) has been widely used for thin film transistors (TFTs). However, the need for an alternative to a-Si TFTs for next-generation display has increased. Therefore, transparent oxide semiconductor (TOS) has gathered a great amount of attention for use in active-matrix liquid-crystal displays (AM-LCDs), organic light-emitting diodes (OLEDs), and transparent flexible displays due to its good electrical properties, low temperature processing, and high transparency [1]. Among many TOSs, amorphous InGaZnO (a-IGZO) is one of the representative materials since it has a high mobility of 10 cm 2/Vs and large area uniformity [2, 3].

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Low-temperature fabrication of fully transparent InGaZnO thin film transistors with Ga-doped ZnO source/drain

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