Low-temperature deposition of high-quality (Ba, Sr)TiO3 (BST) thin films was achieved in air on Pt/Ti/SiO2/Si substrates using the charge liquid cluster beam (CLCB) method. The Ba, Sr, and Ti precursors were synthesized using alkoxy carboxylate ligands to tailor their physical properties to the CLCB process. The as-deposited BST films fabricated at substrate temperatures as low as 280°C exhibited high purity. The leakage current density and dielectric constant of the film, deposited at 300°C and subsequently annealed at 700°C, were 2.5 × 10-9 A/cm2 at 1.5 V and 305, respectively.
Bibliographical noteFunding Information:
Contributions by Mr. Seung Hoon Rhee to the electrical measurements of the films are greatly acknowledged. This work was supported by the SYSTEMIC 2010 program funded by the Korean Ministries of Science and Technology and Commerce, Industry and Energy. S. Park was supported by the DoD Multidisciplinary University Research Initiative (MURI) program administered by the Office of Naval Research under Grant N00014-98-I-0604. The microanalysis contained in this work was carried out in the Center for Microanalysis of Materials, University of Illinois, which is partially supported by the United States Department of Energy under Grant DEFG02-96-ER45439.
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering