Low temperature firing and microwave dielectric properties of Bi4−xGe3O12−1.5x ceramics

Xing Hua Ma; Sang Hyo Kweon; Sahn Nahm; Chong Yun Kang; Seok Jin Yoon; Young Sik Kim

doi:10.1016/j.ceramint.2016.11.121

Low temperature firing and microwave dielectric properties of Bi_4−xGe₃O_12−1.5x ceramics

Xing Hua Ma, Sang Hyo Kweon, Sahn Nahm, Chong Yun Kang, Seok Jin Yoon, Young Sik Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Dense Bi₄Ge₃O₁₂ ceramics sintered at 850 °C had a relative permittivity (ε_r) of 15.7, temperature coefficient of resonant frequency (τ_f) of −24.2 ppm/°C, and quality factor (Q×f) of 28,361 GHz. However, because of the existence of Bi₁₂GeO₂₀ as a secondary phase, the microwave dielectric properties of Bi₄Ge₃O₁₂ would be degraded. Therefore, to avoid the formation of the Bi₁₂GeO₂₀ secondary phase, Bi₂O₃-deficient Bi_4-xGe₃O_12-1.5x ceramics with 0.1≤x≤0.6 were sintered at 850 °C. A single phase of Bi_3.6Ge₃O_11.4 (x=0.4) ceramic sintered at 850 °C for 5 h without any secondary phase exhibited suitable microwave dielectric properties for a ceramic substrate: ε_r=14.9, τ_f =−9.5 ppm/°C, and Q×f=53,277 GHz.

Original language	English
Pages (from-to)	2801-2806
Number of pages	6
Journal	Ceramics International
Volume	43
Issue number	2
DOIs	https://doi.org/10.1016/j.ceramint.2016.11.121
Publication status	Published - 2017 Feb 1

Bibliographical note

Publisher Copyright:
© 2016 Elsevier Ltd and Techna Group S.r.l.

Keywords

BiGeOceramics
BiO deficiency
Low-temperature firing
Microwave dielectric properties

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Process Chemistry and Technology
Surfaces, Coatings and Films
Materials Chemistry

Access to Document

10.1016/j.ceramint.2016.11.121

Cite this

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title = "Low temperature firing and microwave dielectric properties of Bi4−xGe3O12−1.5x ceramics",

abstract = "Dense Bi4Ge3O12 ceramics sintered at 850 °C had a relative permittivity (εr) of 15.7, temperature coefficient of resonant frequency (τf) of −24.2 ppm/°C, and quality factor (Q×f) of 28,361 GHz. However, because of the existence of Bi12GeO20 as a secondary phase, the microwave dielectric properties of Bi4Ge3O12 would be degraded. Therefore, to avoid the formation of the Bi12GeO20 secondary phase, Bi2O3-deficient Bi4-xGe3O12-1.5x ceramics with 0.1≤x≤0.6 were sintered at 850 °C. A single phase of Bi3.6Ge3O11.4 (x=0.4) ceramic sintered at 850 °C for 5 h without any secondary phase exhibited suitable microwave dielectric properties for a ceramic substrate: εr=14.9, τf =−9.5 ppm/°C, and Q×f=53,277 GHz.",

keywords = "BiGeOceramics, BiO deficiency, Low-temperature firing, Microwave dielectric properties",

author = "Ma, {Xing Hua} and Kweon, {Sang Hyo} and Sahn Nahm and Kang, {Chong Yun} and Yoon, {Seok Jin} and Kim, {Young Sik}",

note = "Publisher Copyright: {\textcopyright} 2016 Elsevier Ltd and Techna Group S.r.l.",

year = "2017",

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doi = "10.1016/j.ceramint.2016.11.121",

language = "English",

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T1 - Low temperature firing and microwave dielectric properties of Bi4−xGe3O12−1.5x ceramics

AU - Ma, Xing Hua

AU - Kweon, Sang Hyo

AU - Nahm, Sahn

AU - Kang, Chong Yun

AU - Yoon, Seok Jin

AU - Kim, Young Sik

PY - 2017/2/1

Y1 - 2017/2/1

N2 - Dense Bi4Ge3O12 ceramics sintered at 850 °C had a relative permittivity (εr) of 15.7, temperature coefficient of resonant frequency (τf) of −24.2 ppm/°C, and quality factor (Q×f) of 28,361 GHz. However, because of the existence of Bi12GeO20 as a secondary phase, the microwave dielectric properties of Bi4Ge3O12 would be degraded. Therefore, to avoid the formation of the Bi12GeO20 secondary phase, Bi2O3-deficient Bi4-xGe3O12-1.5x ceramics with 0.1≤x≤0.6 were sintered at 850 °C. A single phase of Bi3.6Ge3O11.4 (x=0.4) ceramic sintered at 850 °C for 5 h without any secondary phase exhibited suitable microwave dielectric properties for a ceramic substrate: εr=14.9, τf =−9.5 ppm/°C, and Q×f=53,277 GHz.

AB - Dense Bi4Ge3O12 ceramics sintered at 850 °C had a relative permittivity (εr) of 15.7, temperature coefficient of resonant frequency (τf) of −24.2 ppm/°C, and quality factor (Q×f) of 28,361 GHz. However, because of the existence of Bi12GeO20 as a secondary phase, the microwave dielectric properties of Bi4Ge3O12 would be degraded. Therefore, to avoid the formation of the Bi12GeO20 secondary phase, Bi2O3-deficient Bi4-xGe3O12-1.5x ceramics with 0.1≤x≤0.6 were sintered at 850 °C. A single phase of Bi3.6Ge3O11.4 (x=0.4) ceramic sintered at 850 °C for 5 h without any secondary phase exhibited suitable microwave dielectric properties for a ceramic substrate: εr=14.9, τf =−9.5 ppm/°C, and Q×f=53,277 GHz.

KW - BiGeOceramics

KW - BiO deficiency

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KW - Microwave dielectric properties

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