Low temperature firing and microwave dielectric properties of Bi4−xGe3O12−1.5x ceramics

Xing Hua Ma, Sang Hyo Kweon, Sahn Nahm, Chong-Yun Kang, Seok Jin Yoon, Young Sik Kim

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


Dense Bi4Ge3O12 ceramics sintered at 850 °C had a relative permittivity (εr) of 15.7, temperature coefficient of resonant frequency (τf) of −24.2 ppm/°C, and quality factor (Q×f) of 28,361 GHz. However, because of the existence of Bi12GeO20 as a secondary phase, the microwave dielectric properties of Bi4Ge3O12 would be degraded. Therefore, to avoid the formation of the Bi12GeO20 secondary phase, Bi2O3-deficient Bi4-xGe3O12-1.5x ceramics with 0.1≤x≤0.6 were sintered at 850 °C. A single phase of Bi3.6Ge3O11.4 (x=0.4) ceramic sintered at 850 °C for 5 h without any secondary phase exhibited suitable microwave dielectric properties for a ceramic substrate: εr=14.9, τf =−9.5 ppm/°C, and Q×f=53,277 GHz.

Original languageEnglish
Pages (from-to)2801-2806
Number of pages6
JournalCeramics International
Issue number2
Publication statusPublished - 2017 Feb 1


  • BiO deficiency
  • BiGeOceramics
  • Low-temperature firing
  • Microwave dielectric properties

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry


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