Low-temperature hybrid dopant activation technique using pulsed green laser for heavily-doped n-type SiGe source/drain

Seung Geun Kim, Gwang Sik Kim, Seung Hwan Kim, Hyun Yong Yu

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

We present a novel hybrid dopant activation technique for n-type silicon-germanium (SiGe) to achieve high doping concentration and ultra-shallow junction at low temperature (≤500 °C) using rapid thermal annealing and pulsed green laser post-annealing (hybrid RTA-GLA). The hybrid RTA-GLA process achieved one of the highest surface and peak doping concentrations of 1.82 × 1020 cm-3 and 9.27 × 1020 cm-3, respectively, compared with low-temperature doping techniques for n-type SiGe. In addition, the n-type SiGe films doped by the hybrid RTA-GLA process provide ultra-shallow (<60 nm) and abrupt (5 nm/decade) junctions. This advanced low-temperature hybrid dopant activation technique is a promising method for developing SiGe-based electronics.

Original languageEnglish
Article number8490847
Pages (from-to)1828-1831
Number of pages4
JournalIEEE Electron Device Letters
Volume39
Issue number12
DOIs
Publication statusPublished - 2018 Dec

Bibliographical note

Funding Information:
Manuscript received September 10, 2018; revised October 3, 2018; accepted October 10, 2018. Date of publication October 12, 2018; date of current version November 26, 2018. This work was supported in part by the Basic Science Research Program within the Ministry of Science, ICT, and Future Planning through the National Research Foundation of Korea under Grant 2017R1A2B4006460, in part by the Nano Material Technology Development Program through the National Research Foundation of Korea funded by the Ministry of Science, ICT and Future Planning under Grant 2016M3A7B4910426, and in part by the Nano Material Technology Development Program through the National Research Foundation of Korea Funded by the Ministry of Science, ICT and Future Planning under Grant 2015M3A7B7045490. The review of this letter was arranged by Editor B. S. Doyle. (Corresponding author: Hyun-Yong Yu.) S.-G. Kim is with the Department of Semiconductor Systems Engineering, Korea University, Seoul 02841, South Korea.

Publisher Copyright:
© 2018 IEEE.

Keywords

  • CMOS technology
  • SiGe source/drain
  • hybrid dopant activation technique
  • low-temperature doping method
  • pulsed green laser

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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