Low-temperature hybrid dopant activation technique using pulsed green laser for heavily-doped n-type SiGe source/drain

Seung Geun Kim; Gwang Sik Kim; Seung Hwan Kim; Hyun Yong Yu

doi:10.1109/LED.2018.2875751

Low-temperature hybrid dopant activation technique using pulsed green laser for heavily-doped n-type SiGe source/drain

Seung Geun Kim, Gwang Sik Kim, Seung Hwan Kim, Hyun Yong Yu

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We present a novel hybrid dopant activation technique for n-type silicon-germanium (SiGe) to achieve high doping concentration and ultra-shallow junction at low temperature (≤500 °C) using rapid thermal annealing and pulsed green laser post-annealing (hybrid RTA-GLA). The hybrid RTA-GLA process achieved one of the highest surface and peak doping concentrations of 1.82 × 10²⁰ cm^-3 and 9.27 × 10²⁰ cm^-3, respectively, compared with low-temperature doping techniques for n-type SiGe. In addition, the n-type SiGe films doped by the hybrid RTA-GLA process provide ultra-shallow (<60 nm) and abrupt (5 nm/decade) junctions. This advanced low-temperature hybrid dopant activation technique is a promising method for developing SiGe-based electronics.

Original language	English
Article number	8490847
Pages (from-to)	1828-1831
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	39
Issue number	12
DOIs	https://doi.org/10.1109/LED.2018.2875751
Publication status	Published - 2018 Dec

Bibliographical note

Funding Information:
Manuscript received September 10, 2018; revised October 3, 2018; accepted October 10, 2018. Date of publication October 12, 2018; date of current version November 26, 2018. This work was supported in part by the Basic Science Research Program within the Ministry of Science, ICT, and Future Planning through the National Research Foundation of Korea under Grant 2017R1A2B4006460, in part by the Nano Material Technology Development Program through the National Research Foundation of Korea funded by the Ministry of Science, ICT and Future Planning under Grant 2016M3A7B4910426, and in part by the Nano Material Technology Development Program through the National Research Foundation of Korea Funded by the Ministry of Science, ICT and Future Planning under Grant 2015M3A7B7045490. The review of this letter was arranged by Editor B. S. Doyle. (Corresponding author: Hyun-Yong Yu.) S.-G. Kim is with the Department of Semiconductor Systems Engineering, Korea University, Seoul 02841, South Korea.

Publisher Copyright:
© 2018 IEEE.

Keywords

CMOS technology
SiGe source/drain
hybrid dopant activation technique
low-temperature doping method
pulsed green laser

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2018.2875751

Cite this

@article{4c8e2e670cfe487bbb04dd7b5b29b7ae,

title = "Low-temperature hybrid dopant activation technique using pulsed green laser for heavily-doped n-type SiGe source/drain",

abstract = "We present a novel hybrid dopant activation technique for n-type silicon-germanium (SiGe) to achieve high doping concentration and ultra-shallow junction at low temperature (≤500 °C) using rapid thermal annealing and pulsed green laser post-annealing (hybrid RTA-GLA). The hybrid RTA-GLA process achieved one of the highest surface and peak doping concentrations of 1.82 × 1020 cm-3 and 9.27 × 1020 cm-3, respectively, compared with low-temperature doping techniques for n-type SiGe. In addition, the n-type SiGe films doped by the hybrid RTA-GLA process provide ultra-shallow (<60 nm) and abrupt (5 nm/decade) junctions. This advanced low-temperature hybrid dopant activation technique is a promising method for developing SiGe-based electronics.",

keywords = "CMOS technology, SiGe source/drain, hybrid dopant activation technique, low-temperature doping method, pulsed green laser",

author = "Kim, {Seung Geun} and Kim, {Gwang Sik} and Kim, {Seung Hwan} and Yu, {Hyun Yong}",

note = "Funding Information: Manuscript received September 10, 2018; revised October 3, 2018; accepted October 10, 2018. Date of publication October 12, 2018; date of current version November 26, 2018. This work was supported in part by the Basic Science Research Program within the Ministry of Science, ICT, and Future Planning through the National Research Foundation of Korea under Grant 2017R1A2B4006460, in part by the Nano Material Technology Development Program through the National Research Foundation of Korea funded by the Ministry of Science, ICT and Future Planning under Grant 2016M3A7B4910426, and in part by the Nano Material Technology Development Program through the National Research Foundation of Korea Funded by the Ministry of Science, ICT and Future Planning under Grant 2015M3A7B7045490. The review of this letter was arranged by Editor B. S. Doyle. (Corresponding author: Hyun-Yong Yu.) S.-G. Kim is with the Department of Semiconductor Systems Engineering, Korea University, Seoul 02841, South Korea. Publisher Copyright: {\textcopyright} 2018 IEEE.",

year = "2018",

month = dec,

doi = "10.1109/LED.2018.2875751",

language = "English",

volume = "39",

pages = "1828--1831",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - Low-temperature hybrid dopant activation technique using pulsed green laser for heavily-doped n-type SiGe source/drain

AU - Kim, Seung Geun

AU - Kim, Gwang Sik

AU - Kim, Seung Hwan

AU - Yu, Hyun Yong

N1 - Funding Information: Manuscript received September 10, 2018; revised October 3, 2018; accepted October 10, 2018. Date of publication October 12, 2018; date of current version November 26, 2018. This work was supported in part by the Basic Science Research Program within the Ministry of Science, ICT, and Future Planning through the National Research Foundation of Korea under Grant 2017R1A2B4006460, in part by the Nano Material Technology Development Program through the National Research Foundation of Korea funded by the Ministry of Science, ICT and Future Planning under Grant 2016M3A7B4910426, and in part by the Nano Material Technology Development Program through the National Research Foundation of Korea Funded by the Ministry of Science, ICT and Future Planning under Grant 2015M3A7B7045490. The review of this letter was arranged by Editor B. S. Doyle. (Corresponding author: Hyun-Yong Yu.) S.-G. Kim is with the Department of Semiconductor Systems Engineering, Korea University, Seoul 02841, South Korea. Publisher Copyright: © 2018 IEEE.

PY - 2018/12

Y1 - 2018/12

N2 - We present a novel hybrid dopant activation technique for n-type silicon-germanium (SiGe) to achieve high doping concentration and ultra-shallow junction at low temperature (≤500 °C) using rapid thermal annealing and pulsed green laser post-annealing (hybrid RTA-GLA). The hybrid RTA-GLA process achieved one of the highest surface and peak doping concentrations of 1.82 × 1020 cm-3 and 9.27 × 1020 cm-3, respectively, compared with low-temperature doping techniques for n-type SiGe. In addition, the n-type SiGe films doped by the hybrid RTA-GLA process provide ultra-shallow (<60 nm) and abrupt (5 nm/decade) junctions. This advanced low-temperature hybrid dopant activation technique is a promising method for developing SiGe-based electronics.

AB - We present a novel hybrid dopant activation technique for n-type silicon-germanium (SiGe) to achieve high doping concentration and ultra-shallow junction at low temperature (≤500 °C) using rapid thermal annealing and pulsed green laser post-annealing (hybrid RTA-GLA). The hybrid RTA-GLA process achieved one of the highest surface and peak doping concentrations of 1.82 × 1020 cm-3 and 9.27 × 1020 cm-3, respectively, compared with low-temperature doping techniques for n-type SiGe. In addition, the n-type SiGe films doped by the hybrid RTA-GLA process provide ultra-shallow (<60 nm) and abrupt (5 nm/decade) junctions. This advanced low-temperature hybrid dopant activation technique is a promising method for developing SiGe-based electronics.

KW - CMOS technology

KW - SiGe source/drain

KW - hybrid dopant activation technique

KW - low-temperature doping method

KW - pulsed green laser

UR - http://www.scopus.com/inward/record.url?scp=85055047701&partnerID=8YFLogxK

U2 - 10.1109/LED.2018.2875751

DO - 10.1109/LED.2018.2875751

M3 - Article

AN - SCOPUS:85055047701

SN - 0741-3106

VL - 39

SP - 1828

EP - 1831

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 12

M1 - 8490847

ER -

Low-temperature hybrid dopant activation technique using pulsed green laser for heavily-doped n-type SiGe source/drain

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Keywords

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