The less surface roughness scattering effects, owing to the unique operation principle, in junctionless nanowire transistors (JLT-NW) were shown by low-temperature characterization and 2D numerical simulation results. This feature could allow a better current drive under a high gate bias. In addition, the dominant scattering mechanisms in JLT-NW, with both a short (LM = 30 nm) and a long channel (LM = 10 μm), were investigated through an in-depth study of the temperature dependence of transconductance (gm) behavior and compared to conventional inversion-mode nanowire transistors.
|Journal||Applied Physics Letters|
|Publication status||Published - 2014 Dec 29|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)