Low-temperature operation of junctionless nanowire transistors: Less surface roughness scattering effects and dominant scattering mechanisms

Dae Young Jeon; So Jeong Park; Mireille Mouis; Sylvain Barraud; Gyu Tae Kim; Gérard Ghibaudo

doi:10.1063/1.4905366

Low-temperature operation of junctionless nanowire transistors: Less surface roughness scattering effects and dominant scattering mechanisms

Dae Young Jeon, So Jeong Park, Mireille Mouis, Sylvain Barraud, Gyu Tae Kim, Gérard Ghibaudo

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

The less surface roughness scattering effects, owing to the unique operation principle, in junctionless nanowire transistors (JLT-NW) were shown by low-temperature characterization and 2D numerical simulation results. This feature could allow a better current drive under a high gate bias. In addition, the dominant scattering mechanisms in JLT-NW, with both a short (L_M = 30 nm) and a long channel (L_M = 10 μm), were investigated through an in-depth study of the temperature dependence of transconductance (g_m) behavior and compared to conventional inversion-mode nanowire transistors.

Original language	English
Article number	263505
Journal	Applied Physics Letters
Volume	105
Issue number	26
DOIs	https://doi.org/10.1063/1.4905366
Publication status	Published - 2014 Dec 29

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Low-temperature operation of junctionless nanowire transistors: Less surface roughness scattering effects and dominant scattering mechanisms",

abstract = "The less surface roughness scattering effects, owing to the unique operation principle, in junctionless nanowire transistors (JLT-NW) were shown by low-temperature characterization and 2D numerical simulation results. This feature could allow a better current drive under a high gate bias. In addition, the dominant scattering mechanisms in JLT-NW, with both a short (LM = 30 nm) and a long channel (LM = 10 μm), were investigated through an in-depth study of the temperature dependence of transconductance (gm) behavior and compared to conventional inversion-mode nanowire transistors.",

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AU - Jeon, Dae Young

AU - Park, So Jeong

AU - Mouis, Mireille

AU - Barraud, Sylvain

AU - Kim, Gyu Tae

AU - Ghibaudo, Gérard

PY - 2014/12/29

Y1 - 2014/12/29

N2 - The less surface roughness scattering effects, owing to the unique operation principle, in junctionless nanowire transistors (JLT-NW) were shown by low-temperature characterization and 2D numerical simulation results. This feature could allow a better current drive under a high gate bias. In addition, the dominant scattering mechanisms in JLT-NW, with both a short (LM = 30 nm) and a long channel (LM = 10 μm), were investigated through an in-depth study of the temperature dependence of transconductance (gm) behavior and compared to conventional inversion-mode nanowire transistors.

AB - The less surface roughness scattering effects, owing to the unique operation principle, in junctionless nanowire transistors (JLT-NW) were shown by low-temperature characterization and 2D numerical simulation results. This feature could allow a better current drive under a high gate bias. In addition, the dominant scattering mechanisms in JLT-NW, with both a short (LM = 30 nm) and a long channel (LM = 10 μm), were investigated through an in-depth study of the temperature dependence of transconductance (gm) behavior and compared to conventional inversion-mode nanowire transistors.

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Low-temperature operation of junctionless nanowire transistors: Less surface roughness scattering effects and dominant scattering mechanisms

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