Low-temperature processing of sol-gel-derived lead-zirconate-titanate thin films by oxygen-plasma treatment

Eung Kil Kang; Hyuk Kyoo Jang; Sung Kyun Lee; Eung Ryul Park; Cheol Eui Lee; Kyung Min Kim; Seung Jeong Noh; Seung Jin Yeom

doi:10.1016/S1567-1739(02)00150-5

Low-temperature processing of sol-gel-derived lead-zirconate-titanate thin films by oxygen-plasma treatment

Eung Kil Kang, Hyuk Kyoo Jang, Sung Kyun Lee, Eung Ryul Park, Cheol Eui Lee, Kyung Min Kim, Seung Jeong Noh, Seung Jin Yeom

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Ferroelectric thin films of sol-gel-derived Pb(Zr_x, Ti_1-x)O₃ (lead-zirconate-titanate, PZT) were obtained by the low-temperature processing employing oxygen-plasma treatment. The as-coated PZT films were annealed in oxygen ambience at 450 °C, followed by oxygen-plasma treatment at 200 °C, which gave rise to the ferroelectric hysteresis. Annealing of the as-coated PZT films followed by oxygen-plasma teratment at 200 °C gave rise to the ferroelectric hysteresis.

Original language	English
Pages (from-to)	407-409
Number of pages	3
Journal	Current Applied Physics
Volume	2
Issue number	5
DOIs	https://doi.org/10.1016/S1567-1739(02)00150-5
Publication status	Published - 2002 Oct

Bibliographical note

Funding Information:
This work was supported by the Korea Ministry of Science and Technology (National Research Laboratory) and the Korea Research Foundation. A grant from Hynix Semiconductor and measurements at the Korea Basic Science Institute (KBSI)-Seoul Branch are acknowledged.

Keywords

Low-temperature processing
Oxygen-plasma treatment
PZT
Thin films

ASJC Scopus subject areas

General Materials Science
General Physics and Astronomy

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10.1016/S1567-1739(02)00150-5

Cite this

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title = "Low-temperature processing of sol-gel-derived lead-zirconate-titanate thin films by oxygen-plasma treatment",

abstract = "Ferroelectric thin films of sol-gel-derived Pb(Zrx, Ti1-x)O3 (lead-zirconate-titanate, PZT) were obtained by the low-temperature processing employing oxygen-plasma treatment. The as-coated PZT films were annealed in oxygen ambience at 450 °C, followed by oxygen-plasma treatment at 200 °C, which gave rise to the ferroelectric hysteresis. Annealing of the as-coated PZT films followed by oxygen-plasma teratment at 200 °C gave rise to the ferroelectric hysteresis.",

keywords = "Low-temperature processing, Oxygen-plasma treatment, PZT, Thin films",

author = "Kang, {Eung Kil} and Jang, {Hyuk Kyoo} and Lee, {Sung Kyun} and Park, {Eung Ryul} and Lee, {Cheol Eui} and Kim, {Kyung Min} and Noh, {Seung Jeong} and Yeom, {Seung Jin}",

note = "Funding Information: This work was supported by the Korea Ministry of Science and Technology (National Research Laboratory) and the Korea Research Foundation. A grant from Hynix Semiconductor and measurements at the Korea Basic Science Institute (KBSI)-Seoul Branch are acknowledged.",

year = "2002",

month = oct,

doi = "10.1016/S1567-1739(02)00150-5",

language = "English",

volume = "2",

pages = "407--409",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Low-temperature processing of sol-gel-derived lead-zirconate-titanate thin films by oxygen-plasma treatment

AU - Kang, Eung Kil

AU - Jang, Hyuk Kyoo

AU - Lee, Sung Kyun

AU - Park, Eung Ryul

AU - Lee, Cheol Eui

AU - Kim, Kyung Min

AU - Noh, Seung Jeong

AU - Yeom, Seung Jin

N1 - Funding Information: This work was supported by the Korea Ministry of Science and Technology (National Research Laboratory) and the Korea Research Foundation. A grant from Hynix Semiconductor and measurements at the Korea Basic Science Institute (KBSI)-Seoul Branch are acknowledged.

PY - 2002/10

Y1 - 2002/10

N2 - Ferroelectric thin films of sol-gel-derived Pb(Zrx, Ti1-x)O3 (lead-zirconate-titanate, PZT) were obtained by the low-temperature processing employing oxygen-plasma treatment. The as-coated PZT films were annealed in oxygen ambience at 450 °C, followed by oxygen-plasma treatment at 200 °C, which gave rise to the ferroelectric hysteresis. Annealing of the as-coated PZT films followed by oxygen-plasma teratment at 200 °C gave rise to the ferroelectric hysteresis.

AB - Ferroelectric thin films of sol-gel-derived Pb(Zrx, Ti1-x)O3 (lead-zirconate-titanate, PZT) were obtained by the low-temperature processing employing oxygen-plasma treatment. The as-coated PZT films were annealed in oxygen ambience at 450 °C, followed by oxygen-plasma treatment at 200 °C, which gave rise to the ferroelectric hysteresis. Annealing of the as-coated PZT films followed by oxygen-plasma teratment at 200 °C gave rise to the ferroelectric hysteresis.

KW - Low-temperature processing

KW - Oxygen-plasma treatment

KW - PZT

KW - Thin films

UR - http://www.scopus.com/inward/record.url?scp=0036802006&partnerID=8YFLogxK

U2 - 10.1016/S1567-1739(02)00150-5

DO - 10.1016/S1567-1739(02)00150-5

M3 - Article

AN - SCOPUS:0036802006

SN - 1567-1739

VL - 2

SP - 407

EP - 409

JO - Current Applied Physics

JF - Current Applied Physics

IS - 5

ER -

Low-temperature processing of sol-gel-derived lead-zirconate-titanate thin films by oxygen-plasma treatment

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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