Low-temperature sintering and microwave dielectric properties of ZnGa2–xO4–1.5x ceramics with added B2O3

Junjia Xia, Xing Hua Ma, Zhenlu Zhang, Sahn Nahm, Shuling Zhang, Xingyi Ma, Feng Guo

Research output: Contribution to journalArticlepeer-review

Abstract

In this work, ZnGa2–xO4–1.5x (0.0 ≤ x ≤ 0.15) ceramics were synthesized by a solid-state reaction method. ZnGa2O4 ceramic that is sintered at 1300 °C/3 h exhibits good microwave dielectric properties with εr of 11.06, Q × f of 74,730 GHz, and τf of − 69.7 ppm/°C. However, it cannot be fully densified at temperatures lower than 960 °C, even when a large amount of B2O3 is added, which seriously inhibits its application in the LTCC (low temperature cofired ceramic) field. Therefore, adding B2O3 to Ga2O3-deficient ZnGa2O4 ceramics is proposed to decrease the sintering temperature to below 960 °C. Owing to the dual effect of the B2O3-rich and ZnO-B2O3 related liquid phases, ceramics with added B2O3 (≥ 20 mol%) were found to sinter well at 950 °C, and good microwave dielectric properties were also achieved. In particular, 25 mol% B2O3 added to ZnGa1.95O3.925 ceramic sintered at 950 °C showed promising microwave dielectric properties for 5 G/6 G technologies without reaction with a silver electrode: εr = 9.19, Q × f = 37,337 GHz, and τf = − 58.3 ppm/°C.

Original languageEnglish
Article number1941
JournalJournal of Materials Science: Materials in Electronics
Volume34
Issue number28
DOIs
Publication statusPublished - 2023 Oct

Bibliographical note

Publisher Copyright:
© 2023, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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