Low-temperature sintering and microwave dielectric properties of V 2O5-added Zn2SiO4 ceramics

Jin Seong Kim; Myung Eun Song; Mi Ri Joung; Jae Hong Choi; Sahn Nahm; Jong Hoo Paik; Byung Hyun Choi; Hwack Joo Lee

doi:10.1111/j.1551-2916.2008.02785.x

Low-temperature sintering and microwave dielectric properties of V ₂O₅-added Zn₂SiO₄ ceramics

Jin Seong Kim, Myung Eun Song, Mi Ri Joung, Jae Hong Choi, Sahn Nahm, Jong Hoo Paik, Byung Hyun Choi, Hwack Joo Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

V₂O₅ was added to ceramics of nominal composition Zn_1.8SiO_3.8 (ZS) in order to decrease their sintering temperature for application to low-temperature cofired ceramic devices. For the specimens sintered at 875°C, a dense microstructure was developed when the V₂O₅ content exceeded 9.0 mol% due to the presence of the liquid phase containing SiO₂ and V₂O₅. The microwave dielectric properties of the ZS ceramics were influenced by the V ₂O₅ content. Good microwave dielectric properties of Q×f=17 500 GHz, ε_r=7.3, and τ_f=-28 ppm/°C were obtained from the specimen containing 12.0 mol% V ₂O₅ sintered at 875°C for 2 h.

Original language	English
Pages (from-to)	4133-4136
Number of pages	4
Journal	Journal of the American Ceramic Society
Volume	91
Issue number	12
DOIs	https://doi.org/10.1111/j.1551-2916.2008.02785.x
Publication status	Published - 2008 Dec

ASJC Scopus subject areas

Ceramics and Composites
Materials Chemistry

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10.1111/j.1551-2916.2008.02785.x

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title = "Low-temperature sintering and microwave dielectric properties of V 2O5-added Zn2SiO4 ceramics",

abstract = "V2O5 was added to ceramics of nominal composition Zn1.8SiO3.8 (ZS) in order to decrease their sintering temperature for application to low-temperature cofired ceramic devices. For the specimens sintered at 875°C, a dense microstructure was developed when the V2O5 content exceeded 9.0 mol% due to the presence of the liquid phase containing SiO2 and V2O5. The microwave dielectric properties of the ZS ceramics were influenced by the V 2O5 content. Good microwave dielectric properties of Q×f=17 500 GHz, εr=7.3, and τf=-28 ppm/°C were obtained from the specimen containing 12.0 mol% V 2O5 sintered at 875°C for 2 h.",

author = "Kim, {Jin Seong} and Song, {Myung Eun} and Joung, {Mi Ri} and Choi, {Jae Hong} and Sahn Nahm and Paik, {Jong Hoo} and Choi, {Byung Hyun} and Lee, {Hwack Joo}",

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doi = "10.1111/j.1551-2916.2008.02785.x",

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AU - Kim, Jin Seong

AU - Song, Myung Eun

AU - Joung, Mi Ri

AU - Choi, Jae Hong

AU - Nahm, Sahn

AU - Paik, Jong Hoo

AU - Choi, Byung Hyun

AU - Lee, Hwack Joo

PY - 2008/12

Y1 - 2008/12

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AB - V2O5 was added to ceramics of nominal composition Zn1.8SiO3.8 (ZS) in order to decrease their sintering temperature for application to low-temperature cofired ceramic devices. For the specimens sintered at 875°C, a dense microstructure was developed when the V2O5 content exceeded 9.0 mol% due to the presence of the liquid phase containing SiO2 and V2O5. The microwave dielectric properties of the ZS ceramics were influenced by the V 2O5 content. Good microwave dielectric properties of Q×f=17 500 GHz, εr=7.3, and τf=-28 ppm/°C were obtained from the specimen containing 12.0 mol% V 2O5 sintered at 875°C for 2 h.

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Low-temperature sintering and microwave dielectric properties of V ₂O₅-added Zn₂SiO₄ ceramics

Abstract

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