Low temperature sintering of BaTi4O9-based middle-k dielectric composition for LTCC applications

Young Jin Choi; Jeong Hyun Park; Won Jun Ko; Jae Hwan Park; Sahn Nahm; Jae Gwan Park

doi:10.1007/s10832-005-0880-8

Low temperature sintering of BaTi₄O₉-based middle-k dielectric composition for LTCC applications

Young Jin Choi^*
, Jeong Hyun Park
, Won Jun Ko
, Jae Hwan Park
, Sahn Nahm
, Jae Gwan Park

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

Abstract

Effect of glass addition on the low-temperature sintering and microwave dielectric properties of BaTi₄O₉-based ceramics were studied to develop the middle-k dielectric composition for the functional substrate of low-temperature co-fired ceramics. When 10 wt% of glass was added, sufficient densification was obtained and the relative density more than 98% was reached at the sintering temperature of 875°C. The microwave dielectric properties were k = 32, Q × f = 9000 GHz, and t _cf = 10 ppm/°C. As the added amount of glass frit with base dielectric composition, phase changes from BaTi₄O₉ to BaTi₅O ₁₁ and Ba₄Ti₁₃O₃₀ was observed, which result in the modification of microwave dielectric properties.

Original language	English
Pages (from-to)	157-162
Number of pages	6
Journal	Journal of Electroceramics
Volume	14
Issue number	2
DOIs	https://doi.org/10.1007/s10832-005-0880-8
Publication status	Published - 2005 Mar

Bibliographical note

Funding Information:
This research was supported in part by a grant from the Center for Advanced Materials Processing (CAMP) of the 21st Century Frontier R&D Program funded by the Ministry of Science and Technology, Republic of Korea.

Keywords

BaTiO
Glass frit
LTCC
Middle-permittivity

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Mechanics of Materials
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1007/s10832-005-0880-8

Cite this

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title = "Low temperature sintering of BaTi4O9-based middle-k dielectric composition for LTCC applications",

abstract = "Effect of glass addition on the low-temperature sintering and microwave dielectric properties of BaTi4O9-based ceramics were studied to develop the middle-k dielectric composition for the functional substrate of low-temperature co-fired ceramics. When 10 wt\% of glass was added, sufficient densification was obtained and the relative density more than 98\% was reached at the sintering temperature of 875°C. The microwave dielectric properties were k = 32, Q × f = 9000 GHz, and t cf = 10 ppm/°C. As the added amount of glass frit with base dielectric composition, phase changes from BaTi4O9 to BaTi5O 11 and Ba4Ti13O30 was observed, which result in the modification of microwave dielectric properties.",

keywords = "BaTiO, Glass frit, LTCC, Middle-permittivity",

author = "Choi, \{Young Jin\} and Park, \{Jeong Hyun\} and Ko, \{Won Jun\} and Park, \{Jae Hwan\} and Sahn Nahm and Park, \{Jae Gwan\}",

note = "Funding Information: This research was supported in part by a grant from the Center for Advanced Materials Processing (CAMP) of the 21st Century Frontier R\&D Program funded by the Ministry of Science and Technology, Republic of Korea.",

year = "2005",

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doi = "10.1007/s10832-005-0880-8",

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T1 - Low temperature sintering of BaTi4O9-based middle-k dielectric composition for LTCC applications

AU - Choi, Young Jin

AU - Park, Jeong Hyun

AU - Ko, Won Jun

AU - Park, Jae Hwan

AU - Nahm, Sahn

AU - Park, Jae Gwan

N1 - Funding Information: This research was supported in part by a grant from the Center for Advanced Materials Processing (CAMP) of the 21st Century Frontier R&D Program funded by the Ministry of Science and Technology, Republic of Korea.

PY - 2005/3

Y1 - 2005/3

N2 - Effect of glass addition on the low-temperature sintering and microwave dielectric properties of BaTi4O9-based ceramics were studied to develop the middle-k dielectric composition for the functional substrate of low-temperature co-fired ceramics. When 10 wt% of glass was added, sufficient densification was obtained and the relative density more than 98% was reached at the sintering temperature of 875°C. The microwave dielectric properties were k = 32, Q × f = 9000 GHz, and t cf = 10 ppm/°C. As the added amount of glass frit with base dielectric composition, phase changes from BaTi4O9 to BaTi5O 11 and Ba4Ti13O30 was observed, which result in the modification of microwave dielectric properties.

AB - Effect of glass addition on the low-temperature sintering and microwave dielectric properties of BaTi4O9-based ceramics were studied to develop the middle-k dielectric composition for the functional substrate of low-temperature co-fired ceramics. When 10 wt% of glass was added, sufficient densification was obtained and the relative density more than 98% was reached at the sintering temperature of 875°C. The microwave dielectric properties were k = 32, Q × f = 9000 GHz, and t cf = 10 ppm/°C. As the added amount of glass frit with base dielectric composition, phase changes from BaTi4O9 to BaTi5O 11 and Ba4Ti13O30 was observed, which result in the modification of microwave dielectric properties.

KW - BaTiO

KW - Glass frit

KW - LTCC

KW - Middle-permittivity

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