Low turn-on voltage and series resistance of polarization-induced InGaN-GaN LEDs by using p-InGaN/p-GaN superlattice

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Abstract

We have demonstrated high-performance InGaN-GaN multiple quantum-wells light-emitting diodes (LEDs) using polarization-induced (PI) p-InGaN-GaN superlattice. Electrical measurements show that PI LEDs produce much lower series resistance and turn-on voltage (at 20 mA) as compared to those of normal LEDs without the superlattice. It is also shown that the output power and photon wavelength of the PI LEDs remain electrically stable up to a high stress region of 200 mA. However, those of normal LEDs become electrically and optically degraded in excess of 120 mA. These results show that the use of the PI effect is very effective to the improvement of the electrical properties of LEDs.

Original languageEnglish
Article number1650272
Pages (from-to)1536-1538
Number of pages3
JournalIEEE Photonics Technology Letters
Volume18
Issue number14
DOIs
Publication statusPublished - 2006 Jul 15

Bibliographical note

Funding Information:
Manuscript received December 8, 2005; revised April 10, 2006. This work was supported by a Korea University Grant. The authors are with the Division of Materials Science and Engineering, Korea University, Seoul 136-701, Korea (e-mail: jjscontact@yahoo.co.kr; tyseong@korea.ac.kr). Digital Object Identifier 10.1109/LPT.2006.877621 Fig. 1. Cross-sectional schematic of a PI LED. The inset shows schematic of the energy band structure of the metal/p-InGaN/p-GaN superlattice. (Color version available online at http://ieeexplore.ieee.org.)

Keywords

  • Index terms-ingan-gan superlattice
  • Light-emitting diode (led)
  • Oxidized ni-au scheme
  • Polarization-induced effect

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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