TY - JOUR
T1 - Low-voltage operating solution-processed CdS thin-film transistor with Ca 2 Nb 3 O 10 nanosheets deposited using Langmuir–Blodgett method for a gate insulator
AU - Kang, Leeseung
AU - An, Hye Lan
AU - Jung, Seungmin
AU - Kim, Seyul
AU - Nahm, Sahn
AU - Kim, Dae guen
AU - Lee, Chan Gi
N1 - Funding Information:
This study was supported by the R&D Center for Valuable Recycling (Global-Top R&BD Program) of the Ministry of Environment (Project No.: 2016002250005 ).
PY - 2019/5/15
Y1 - 2019/5/15
N2 - One of the most demanding challenges in next-generation thin-film transistors (TFTs) is the development of new materials for high-performance devices with higher speed and lower operation voltage. To drive a TFT at a low power, it is important to form an insulating layer as a thin film with good characteristics. Langmuir–Blodgett (LB) technique is one of the most suitable methods for controlling and developing two-dimensional nanomaterials. In the LB method, a layer only one molecule thick (Langmuir monolayer) is spread at the air/water interface and transferred onto the surface of a solid substrate and the process can be repeated several times with the same substrate to deposit multilayer films. In this study, a Ca 2 Nb 3 O 10 (CNO) dielectric layer was fabricated using the LB method, and a CdS active layer was fabricated using the chemical bath deposition (CBD) method to obtain the final structure of CdS-TFTs. CNO dielectric layers have low leakage current density (7.26 × 10 −7 A cm −2 ) and a high capacitance density of 944 nF cm −2 at 100 kHz. Therefore, it is considered that the CNO films produced using the LB method are suitable as an insulating layer material. Furthermore, the CdS-TFTs exhibited good performance with a low threshold voltage of 0.596 V, I on /I off current ratio of 10 6 , subthreshold slope of 0.05 V dec −1 , and high mobility of 0.428 cm 2 V −1 s −1 at operating voltages less than 2 V.
AB - One of the most demanding challenges in next-generation thin-film transistors (TFTs) is the development of new materials for high-performance devices with higher speed and lower operation voltage. To drive a TFT at a low power, it is important to form an insulating layer as a thin film with good characteristics. Langmuir–Blodgett (LB) technique is one of the most suitable methods for controlling and developing two-dimensional nanomaterials. In the LB method, a layer only one molecule thick (Langmuir monolayer) is spread at the air/water interface and transferred onto the surface of a solid substrate and the process can be repeated several times with the same substrate to deposit multilayer films. In this study, a Ca 2 Nb 3 O 10 (CNO) dielectric layer was fabricated using the LB method, and a CdS active layer was fabricated using the chemical bath deposition (CBD) method to obtain the final structure of CdS-TFTs. CNO dielectric layers have low leakage current density (7.26 × 10 −7 A cm −2 ) and a high capacitance density of 944 nF cm −2 at 100 kHz. Therefore, it is considered that the CNO films produced using the LB method are suitable as an insulating layer material. Furthermore, the CdS-TFTs exhibited good performance with a low threshold voltage of 0.596 V, I on /I off current ratio of 10 6 , subthreshold slope of 0.05 V dec −1 , and high mobility of 0.428 cm 2 V −1 s −1 at operating voltages less than 2 V.
KW - Ca Nb O nanosheets
KW - CdS active layer
KW - Low-voltage operating
KW - Thin-film transistor
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U2 - 10.1016/j.apsusc.2019.01.132
DO - 10.1016/j.apsusc.2019.01.132
M3 - Article
AN - SCOPUS:85060198806
SN - 0169-4332
VL - 476
SP - 374
EP - 377
JO - Applied Surface Science
JF - Applied Surface Science
ER -