Low-voltage organic devices based on pristine and self-assembled monolayer-treated HfTiOx gate dielectrics

Jang Woon Kim, Jeong Do Oh, Dae Kyu Kim, Han Young Lee, Young Geun Ha, Jong Ho Choi

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

Low-voltage organic field-effect transistors (OFETs) and complementary metal oxide semiconductor (CMOS) inverters based on pentacene and N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13) were fabricated on HfTiOx gate dielectrics. Both pristine dielectrics and substrates passivated with self-assembled monolayers (SAMs) of n-dodecylphosphonic acid (PA-C12) were employed. The high capacitance and low leakage current of the HfTiOx-based dielectrics enabled the devices to operate at |V| < 3 V. Passivation with PA-C12 was highly effective in improving the device characteristics. In particular, an electron mobility of 0.72 cm2 V-1 s-1 was measured for the device fabricated with the passivated HfTiOx dielectric, which represents the best performance reported to date for perylene-based OFETs prepared with thin, high-k gate dielectrics. The CMOS inverters exhibited fast switching and high gain characteristics, which were attributed to good coupling between the optimized p- and n-type OFETs.

Original languageEnglish
Pages (from-to)7999-8005
Number of pages7
JournalJournal of Materials Chemistry C
Volume4
Issue number34
DOIs
Publication statusPublished - 2016

Bibliographical note

Funding Information:
This work was supported by grants from the National Research Foundation (NRF) of Korea, which are funded by the Ministry of Science, ICT, and Future Planning (NRF2014R1A2A2A01005719) and from the Basic Science Research Program funded by the Ministry of Education through the NRF of Korea (NRF20100020209).

Publisher Copyright:
© 2016 The Royal Society of Chemistry.

ASJC Scopus subject areas

  • General Chemistry
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'Low-voltage organic devices based on pristine and self-assembled monolayer-treated HfTiOx gate dielectrics'. Together they form a unique fingerprint.

Cite this