Abstract
In this paper, organic light-emitting field effect transistors (OLEFETs) operating at low voltages |Vop| below 10 V were first produced and characterized. n-Dodecylphosphonic acid (PA-C12)-self-assembled monolayer (SAM)-passivated HfOx dielectrics prepared using sol-gel chemistry decreased the device-operating voltages. Crystalline organic active layers of pentacene and N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13) acted as p-and n-type materials, respectively. 4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran doped onto a tris(8-hydroxyquinoline) aluminum (Alq3:DCM) layer was used as a light-emitting medium to enhance the luminescence efficiency. Based on a tri-layered structure with balanced ambipolar transports and the combined high capacitance-low leakage current of the PA-C12-SAM-treated HfOx dielectrics, the OLEFETs demonstrated good device performance with light emission at |Vop| < 10 V. The transistor characteristics and operating light-emission mechanisms were discussed based on the EL images acquired using a charge-coupled device (CCD) camera under ambient conditions.
| Original language | English |
|---|---|
| Pages (from-to) | 287-294 |
| Number of pages | 8 |
| Journal | Organic Electronics |
| Volume | 51 |
| DOIs | |
| Publication status | Published - 2017 Dec |
Bibliographical note
Funding Information:This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education ( NRF20100020209 and NRF2017R1D1A1B03027893 ).
Publisher Copyright:
© 2017 Elsevier B.V.
Keywords
- HfO dielectrics
- Low voltages operation
- Operating lightemission mechanisms
- Organic light-emitting field effect transistors (OLEFETs)
- n-Dodecylphosphonic acid (PA-C12)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Biomaterials
- General Chemistry
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering