Based on the p-type pentacene and n-type N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13), low-voltage organic field-effect transistors (OFETs) and inverters using hafnium (Hf)-based dielectrics were produced and characterized. All the pristine and cyclic olefin copolymer (COC)-passivated HfOx gate dielectrics were deposited by the solution-processed sol-gel chemistry, and organic thin films were deposited on the dielectrics by the neutral cluster beam deposition method. In comparison to the pristine HfOx-based OFETs, the COC-passivated transistors showed better device performance: higher hole and electron mobilities, reduced hysteresis, decreased trap densities, and particularly improved operational stability of n-type transistors. The inverters composed of the optimized p- and n-type OFETs with the asymmetric Au and LiF/Al electrodes using COC-passivated HfOx dielectrics exhibited high gains and good noise margins under ambient conditions.
Bibliographical noteFunding Information:
This study was supported by the grant from the National Research Foundation (NRF) of Korea funded by the Ministry of Science, ICT and Future Planning ( NRF2014R1A2A2A01005719 ) and the Basic Science Research Program through the NRF funded by the Ministry of Education ( NRF20100020209 ).
© 2015 Elsevier Ltd. All rights reserved.
- Complementary metal oxide semiconductor (CMOS) inverters
- Cyclic olefin copolymer (COC)
- HfO dielectrics
- Organic field-effect transistors (OFETs)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- General Chemistry
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering