Lowerature-Grown KNbO3 Thin Films and Their Application to Piezoelectric Nanogenerators and Self-Powered ReRAM Device

Tae Ho Lee; Hyun Gyu Hwang; Seonghoon Jang; Gunuk Wang; Seongbeom Han; Dong Hwee Kim; Chong Yun Kang; Sahn Nahm

doi:10.1021/acsami.7b11519

Lowerature-Grown KNbO₃ Thin Films and Their Application to Piezoelectric Nanogenerators and Self-Powered ReRAM Device

Tae Ho Lee, Hyun Gyu Hwang, Seonghoon Jang, Gunuk Wang, Seongbeom Han, Dong Hwee Kim, Chong Yun Kang, Sahn Nahm

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

Amorphous KNbO₃ (KN) film containing KN nanocrystals was grown on TiN/SiO₂/Si substrate at 350 °C. This KN film showed a dielectric constant (Îμ _r) and a piezoelectric strain constant (d₃₃) of 43 and 80 pm/V at 10 V, respectively, owing to the existence of KN nanocrystals. Piezoelectric nanogenerators (PNGs) were fabricated using KN films grown on the TiN/polyimide/poly(ethylene terephthalate) substrates. The PNG fabricated with the KN film grown at 350 °C showed an open-circuit output voltage of 2.5 V and a short-circuit current of 70 nA. The KN film grown at 350 °C exhibited a bipolar resistive switching behavior with good reliability characteristics that can be explained by the formation and rupture of the oxygen vacancy filaments. The KN resistive random access memory device powered by the KN PNG also showed promising resistive switching behavior. Moreover, the KN film shows good biocompatibility. Therefore, the KN film can be used for self-powered biomedical devices.

Original language	English
Pages (from-to)	43220-43229
Number of pages	10
Journal	ACS Applied Materials and Interfaces
Volume	9
Issue number	49
DOIs	https://doi.org/10.1021/acsami.7b11519
Publication status	Published - 2017 Dec 13

Bibliographical note

Funding Information:
This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (2017R1A2B4007189). We thank the KU-KIST graduate school program of Korea University.

Publisher Copyright:
© 2017 American Chemical Society.

Keywords

ReRAM
lowerature-grown KNbO
nanocrystal
nanogenerator
self-powered

ASJC Scopus subject areas

Materials Science(all)

Access to Document

10.1021/acsami.7b11519

Cite this

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title = "Lowerature-Grown KNbO3 Thin Films and Their Application to Piezoelectric Nanogenerators and Self-Powered ReRAM Device",

abstract = "Amorphous KNbO3 (KN) film containing KN nanocrystals was grown on TiN/SiO2/Si substrate at 350 °C. This KN film showed a dielectric constant ({\^I}μ r) and a piezoelectric strain constant (d33) of 43 and 80 pm/V at 10 V, respectively, owing to the existence of KN nanocrystals. Piezoelectric nanogenerators (PNGs) were fabricated using KN films grown on the TiN/polyimide/poly(ethylene terephthalate) substrates. The PNG fabricated with the KN film grown at 350 °C showed an open-circuit output voltage of 2.5 V and a short-circuit current of 70 nA. The KN film grown at 350 °C exhibited a bipolar resistive switching behavior with good reliability characteristics that can be explained by the formation and rupture of the oxygen vacancy filaments. The KN resistive random access memory device powered by the KN PNG also showed promising resistive switching behavior. Moreover, the KN film shows good biocompatibility. Therefore, the KN film can be used for self-powered biomedical devices.",

keywords = "ReRAM, lowerature-grown KNbO, nanocrystal, nanogenerator, self-powered",

author = "Lee, {Tae Ho} and Hwang, {Hyun Gyu} and Seonghoon Jang and Gunuk Wang and Seongbeom Han and Kim, {Dong Hwee} and Kang, {Chong Yun} and Sahn Nahm",

note = "Funding Information: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (2017R1A2B4007189). We thank the KU-KIST graduate school program of Korea University. Publisher Copyright: {\textcopyright} 2017 American Chemical Society.",

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AU - Lee, Tae Ho

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AU - Wang, Gunuk

AU - Han, Seongbeom

AU - Kim, Dong Hwee

AU - Kang, Chong Yun

AU - Nahm, Sahn

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PY - 2017/12/13

Y1 - 2017/12/13

N2 - Amorphous KNbO3 (KN) film containing KN nanocrystals was grown on TiN/SiO2/Si substrate at 350 °C. This KN film showed a dielectric constant (Îμ r) and a piezoelectric strain constant (d33) of 43 and 80 pm/V at 10 V, respectively, owing to the existence of KN nanocrystals. Piezoelectric nanogenerators (PNGs) were fabricated using KN films grown on the TiN/polyimide/poly(ethylene terephthalate) substrates. The PNG fabricated with the KN film grown at 350 °C showed an open-circuit output voltage of 2.5 V and a short-circuit current of 70 nA. The KN film grown at 350 °C exhibited a bipolar resistive switching behavior with good reliability characteristics that can be explained by the formation and rupture of the oxygen vacancy filaments. The KN resistive random access memory device powered by the KN PNG also showed promising resistive switching behavior. Moreover, the KN film shows good biocompatibility. Therefore, the KN film can be used for self-powered biomedical devices.

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