Lowerature-Grown KNbO3 Thin Films and Their Application to Piezoelectric Nanogenerators and Self-Powered ReRAM Device

Tae Ho Lee, Hyun Gyu Hwang, Seonghoon Jang, Gunuk Wang, Seongbeom Han, Dong Hwee Kim, Chong Yun Kang, Sahn Nahm

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)


Amorphous KNbO3 (KN) film containing KN nanocrystals was grown on TiN/SiO2/Si substrate at 350 °C. This KN film showed a dielectric constant (Îμ r) and a piezoelectric strain constant (d33) of 43 and 80 pm/V at 10 V, respectively, owing to the existence of KN nanocrystals. Piezoelectric nanogenerators (PNGs) were fabricated using KN films grown on the TiN/polyimide/poly(ethylene terephthalate) substrates. The PNG fabricated with the KN film grown at 350 °C showed an open-circuit output voltage of 2.5 V and a short-circuit current of 70 nA. The KN film grown at 350 °C exhibited a bipolar resistive switching behavior with good reliability characteristics that can be explained by the formation and rupture of the oxygen vacancy filaments. The KN resistive random access memory device powered by the KN PNG also showed promising resistive switching behavior. Moreover, the KN film shows good biocompatibility. Therefore, the KN film can be used for self-powered biomedical devices.

Original languageEnglish
Pages (from-to)43220-43229
Number of pages10
JournalACS Applied Materials and Interfaces
Issue number49
Publication statusPublished - 2017 Dec 13

Bibliographical note

Funding Information:
This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (2017R1A2B4007189). We thank the KU-KIST graduate school program of Korea University.

Publisher Copyright:
© 2017 American Chemical Society.


  • ReRAM
  • lowerature-grown KNbO
  • nanocrystal
  • nanogenerator
  • self-powered

ASJC Scopus subject areas

  • General Materials Science


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