Abstract
Magnetic domain wall motion is numerically studied in a nanowire with a Dzyaloshinskii-Moriya interaction (DMI) step at which DMI varies in real space. The spatially modulated DMI results in the formation of asymmetric domain wall energy landscape across the step, which affects the domain wall motion significantly. Utilizing this DMI step, we propose a domain wall memory device where the switching of up- and down-state is induced by a spin-orbit spin-transfer torque (SOT)-driven domain wall motion. This domain wall memory device is expected to have a high switching efficiency.
Original language | English |
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Pages (from-to) | 1576-1581 |
Number of pages | 6 |
Journal | Current Applied Physics |
Volume | 17 |
Issue number | 12 |
DOIs | |
Publication status | Published - 2017 Dec |
Bibliographical note
Funding Information:This work was supported by the National Research Foundation of Korea (NRF) [ NRF-2015M3D1A1070465 , NRF-2017R1A2B2006119 ]; KU-KIST School Project, and the DGIST R&D Program of the Ministry of Science, ICT and Future Planning [ 17-BT-02 ].
Publisher Copyright:
© 2017 Elsevier B.V.
Keywords
- Domain wall memory device
- Domain wall motion
- Dzyaloshinskii-Moriya interaction
- Magnonic crystal
- Spin-orbit spin-transfer torque
ASJC Scopus subject areas
- General Materials Science
- General Physics and Astronomy