Magnetic domain wall motion by current injection in CoPt nanowires consisting of notches

Su Jung Noh; Yasuyoshi Miyamoto; Naoto Hayashi; Ji Sung Lee; Young Keun Kim

doi:10.1016/j.ssc.2012.03.004

Magnetic domain wall motion by current injection in CoPt nanowires consisting of notches

Su Jung Noh, Yasuyoshi Miyamoto, Naoto Hayashi, Ji Sung Lee, Young Keun Kim

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Magnetic domain wall behaviors in CoPt nanowires consisting of multiple pairs of notches were investigated by experimental measurements as well as by micromagnetic modeling. The nanowires were fabricated by ion-beam sputter deposition and e-beam lithography where one to three triangular shaped notches were installed at an interval of 1 μm. Based on the evaluated I-V characteristics, we observed that differential resistance curves showed two peaks with a local minimum at around zero current; the domain wall was trapped between the current ranges within these two peaks. As the number of notch was increased, the resistance of the nanowire became larger.

Original language	English
Pages (from-to)	1004-1007
Number of pages	4
Journal	Solid State Communications
Volume	152
Issue number	12
DOIs	https://doi.org/10.1016/j.ssc.2012.03.004
Publication status	Published - 2012 Jun

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology (no. 2011-0016497 ). SJN is grateful for the BK21 Global Internship program (no. T1100141 ) sponsored by National Research Foundation of Korea.

Keywords

C. Notched magnetic nanowire
D. Domain wall motion
E. Differential resistance
E. Micromagnetic simulation

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/j.ssc.2012.03.004

Cite this

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title = "Magnetic domain wall motion by current injection in CoPt nanowires consisting of notches",

abstract = "Magnetic domain wall behaviors in CoPt nanowires consisting of multiple pairs of notches were investigated by experimental measurements as well as by micromagnetic modeling. The nanowires were fabricated by ion-beam sputter deposition and e-beam lithography where one to three triangular shaped notches were installed at an interval of 1 μm. Based on the evaluated I-V characteristics, we observed that differential resistance curves showed two peaks with a local minimum at around zero current; the domain wall was trapped between the current ranges within these two peaks. As the number of notch was increased, the resistance of the nanowire became larger.",

keywords = "C. Notched magnetic nanowire, D. Domain wall motion, E. Differential resistance, E. Micromagnetic simulation",

author = "Noh, {Su Jung} and Yasuyoshi Miyamoto and Naoto Hayashi and Lee, {Ji Sung} and Kim, {Young Keun}",

note = "Funding Information: This work was supported by the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology (no. 2011-0016497 ). SJN is grateful for the BK21 Global Internship program (no. T1100141 ) sponsored by National Research Foundation of Korea.",

year = "2012",

month = jun,

doi = "10.1016/j.ssc.2012.03.004",

language = "English",

volume = "152",

pages = "1004--1007",

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AU - Noh, Su Jung

AU - Miyamoto, Yasuyoshi

AU - Hayashi, Naoto

AU - Lee, Ji Sung

AU - Kim, Young Keun

N1 - Funding Information: This work was supported by the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology (no. 2011-0016497 ). SJN is grateful for the BK21 Global Internship program (no. T1100141 ) sponsored by National Research Foundation of Korea.

PY - 2012/6

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N2 - Magnetic domain wall behaviors in CoPt nanowires consisting of multiple pairs of notches were investigated by experimental measurements as well as by micromagnetic modeling. The nanowires were fabricated by ion-beam sputter deposition and e-beam lithography where one to three triangular shaped notches were installed at an interval of 1 μm. Based on the evaluated I-V characteristics, we observed that differential resistance curves showed two peaks with a local minimum at around zero current; the domain wall was trapped between the current ranges within these two peaks. As the number of notch was increased, the resistance of the nanowire became larger.

AB - Magnetic domain wall behaviors in CoPt nanowires consisting of multiple pairs of notches were investigated by experimental measurements as well as by micromagnetic modeling. The nanowires were fabricated by ion-beam sputter deposition and e-beam lithography where one to three triangular shaped notches were installed at an interval of 1 μm. Based on the evaluated I-V characteristics, we observed that differential resistance curves showed two peaks with a local minimum at around zero current; the domain wall was trapped between the current ranges within these two peaks. As the number of notch was increased, the resistance of the nanowire became larger.

KW - C. Notched magnetic nanowire

KW - D. Domain wall motion

KW - E. Differential resistance

KW - E. Micromagnetic simulation

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DO - 10.1016/j.ssc.2012.03.004

M3 - Article

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SN - 0038-1098

VL - 152

SP - 1004

EP - 1007

JO - Solid State Communications

JF - Solid State Communications

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ER -

Magnetic domain wall motion by current injection in CoPt nanowires consisting of notches

Abstract

Bibliographical note

Keywords

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