Magnetic domain wall motion by current injection in CoPt nanowires consisting of notches

Su Jung Noh, Yasuyoshi Miyamoto, Naoto Hayashi, Ji Sung Lee, Young Keun Kim

    Research output: Contribution to journalArticlepeer-review

    1 Citation (Scopus)

    Abstract

    Magnetic domain wall behaviors in CoPt nanowires consisting of multiple pairs of notches were investigated by experimental measurements as well as by micromagnetic modeling. The nanowires were fabricated by ion-beam sputter deposition and e-beam lithography where one to three triangular shaped notches were installed at an interval of 1 μm. Based on the evaluated I-V characteristics, we observed that differential resistance curves showed two peaks with a local minimum at around zero current; the domain wall was trapped between the current ranges within these two peaks. As the number of notch was increased, the resistance of the nanowire became larger.

    Original languageEnglish
    Pages (from-to)1004-1007
    Number of pages4
    JournalSolid State Communications
    Volume152
    Issue number12
    DOIs
    Publication statusPublished - 2012 Jun

    Bibliographical note

    Funding Information:
    This work was supported by the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology (no. 2011-0016497 ). SJN is grateful for the BK21 Global Internship program (no. T1100141 ) sponsored by National Research Foundation of Korea.

    Keywords

    • C. Notched magnetic nanowire
    • D. Domain wall motion
    • E. Differential resistance
    • E. Micromagnetic simulation

    ASJC Scopus subject areas

    • General Chemistry
    • Condensed Matter Physics
    • Materials Chemistry

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