Magnetic domain wall motion by current injection in CoPt nanowires consisting of notches

Su Jung Noh, Yasuyoshi Miyamoto, Naoto Hayashi, Ji Sung Lee, Young Keun Kim

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


Magnetic domain wall behaviors in CoPt nanowires consisting of multiple pairs of notches were investigated by experimental measurements as well as by micromagnetic modeling. The nanowires were fabricated by ion-beam sputter deposition and e-beam lithography where one to three triangular shaped notches were installed at an interval of 1 μm. Based on the evaluated I-V characteristics, we observed that differential resistance curves showed two peaks with a local minimum at around zero current; the domain wall was trapped between the current ranges within these two peaks. As the number of notch was increased, the resistance of the nanowire became larger.

Original languageEnglish
Pages (from-to)1004-1007
Number of pages4
JournalSolid State Communications
Issue number12
Publication statusPublished - 2012 Jun


  • C. Notched magnetic nanowire
  • D. Domain wall motion
  • E. Differential resistance
  • E. Micromagnetic simulation

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry


Dive into the research topics of 'Magnetic domain wall motion by current injection in CoPt nanowires consisting of notches'. Together they form a unique fingerprint.

Cite this