Abstract
Magnetic domain wall behaviors in CoPt nanowires consisting of multiple pairs of notches were investigated by experimental measurements as well as by micromagnetic modeling. The nanowires were fabricated by ion-beam sputter deposition and e-beam lithography where one to three triangular shaped notches were installed at an interval of 1 μm. Based on the evaluated I-V characteristics, we observed that differential resistance curves showed two peaks with a local minimum at around zero current; the domain wall was trapped between the current ranges within these two peaks. As the number of notch was increased, the resistance of the nanowire became larger.
Original language | English |
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Pages (from-to) | 1004-1007 |
Number of pages | 4 |
Journal | Solid State Communications |
Volume | 152 |
Issue number | 12 |
DOIs | |
Publication status | Published - 2012 Jun |
Bibliographical note
Funding Information:This work was supported by the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology (no. 2011-0016497 ). SJN is grateful for the BK21 Global Internship program (no. T1100141 ) sponsored by National Research Foundation of Korea.
Keywords
- C. Notched magnetic nanowire
- D. Domain wall motion
- E. Differential resistance
- E. Micromagnetic simulation
ASJC Scopus subject areas
- General Chemistry
- Condensed Matter Physics
- Materials Chemistry